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CDBDSC8650-G

Part Number	CDBDSC8650-G
Manufacturer	Comchip
Description	Silicon Carbide Power Schottky Diode
Published	Aug 13, 2019
Detailed Description	Silicon Carbide Power Schottky Diode CDBDSC8650-G Reverse Voltage: 650 V Forward Current: 8 A RoHS Device Features - Ra...
Datasheet	CDBDSC8650-G PDF File

Overview

Silicon Carbide Power Schottky Diode CDBDSC8650-G Reverse Voltage: 650 V Forward Current: 8 A RoHS Device Features - Rated to 650V at 8 Amps - Short recovery time - High speed switching possible - High frequency operation.
- High temperature operation.
- Temperature independent switching behaviour.
- Positive temperature coefficient on VF Circuit Diagram C(3) 0.
409(10.
40) 0.
394(10.
00) 0.
244(6.
20) 0.
236(6.
00) D-PAK(TO-252) 0.
264(6.
70) 0.
256(6.
50) 0.
215(5.
46) 0.
201(5.
10) 3 Φ 0.
051(1.
30) 0.
043(1.
10) 12 0.
023(0.
58) 0.
018(0.
46) 0.
012(0.
30) Max.
0.
091(2.
32) 0.
089(2.
28) 0.
093(2.
37) 0.
085(2.
16) 0.
034(0.
86) 0.
026(0.
66) 0.
090(2.
29) 0.
035(0.
89) 0.
114(2.
90) 0.
100(2.
55) 0.
023(0.
58) 0.
016(0.
43...

Similar Datasheet

CDBDSC8650-G Silicon Carbide Power Schottky Diode - Comchip

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