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CDBJSC101700-G

Comchip
Part Number CDBJSC101700-G
Manufacturer Comchip
Description Silicon Carbide Power Schottky Diode
Published Aug 13, 2019
Detailed Description Silicon Carbide Power Schottky Diode CDBJSC101700-G Reverse Voltage: 1700 V Forward Current: 10 A RoHS Device Features ...
Datasheet PDF File CDBJSC101700-G PDF File

CDBJSC101700-G
CDBJSC101700-G

Overview
Silicon Carbide Power Schottky Diode CDBJSC101700-G Reverse Voltage: 1700 V Forward Current: 10 A RoHS Device Features - Rated to 1700V at 10 Amps - Short recovery time.
- High speed switching possible.
- High frequency operation.
- High temperature operation.
- Temperature independent switching behaviour.
- Positive temperature coefficient on VF.
Circuit diagram K(3) K(1) A(2) TO-220-2 pin 0.
116(2.
95) 0.
104(2.
65) 0.
409(10.
40) 0.
394(10.
00) 0.
311(7.
90) 0.
303(7.
70) 0.
152(3.
85) 0.
148(3.
75) 0.
646(16.
40) Max.
0.
620(15.
75) 0.
600(15.
25) 0.
181(4.
60) 0.
173(4.
40) 0.
052(1.
32) 0.
048(1.
23) 0.
260(6.
60) 0.
244(6.
20) 0.
067(1.
70) 0.
045(1.
14) 0.
155(3.
93) 0.
138(3.
50) 0.
551(14.
00) 0.
512(13.
00) 0.
107(2.
72) 0.
094(2.
40) 0.
035(0.
88) 0.
024(0.
61) 0.
203(5.
15) 0.
195(4.
95) 0.
028(0.
70) 0.
019(0.
49) Dimensions in inches and (millimeter) Maximum Rating (at Ta=25°C unless otherwise noted) Parameter Conditions Symbol Repetitive peak reverse voltage Surge peak reverse voltage DC bolcking voltage Continuous forward current Repetitive peak forward surge current Non-repetitive peak forward surge current Power dissipation Typical thermal resistance Operating junction temperature range Storage temperature range TC = 25°C TC = 135°C TC = 155°C Tc = 25°C, tp = 10ms Half sine wave, D = 0.
3 Tc = 25°C, tp = 10ms Half sine wave TC = 25°C TC = 110°C Junction to case VRRM VRSM VDC IF IFRM IFSM PTOT RθJC TJ TSTG Value 1700 1700 1700 35 17 10 50 90 192 82 0.
78 -55 ~ +175 -55 ~ +175 Unit V V V A A A W °C/W °C °C Company reserves the right to improve product design , functions and reliability without notice.
REV: QW-BSCxx Comchip Technology CO.
, LTD.
Page 1 Silicon Carbide Power Schottky Diode Electrical Characteristics (at Ta=25°C unless otherwise noted) Parameter Forward voltage Reverse current Total capacitive charge Total capacitance Conditions IF = 10 A , TJ = 25°C IF = 10 A , TJ = 175°C VR = 1700V , TJ = 25°C VR = 1700V , TJ = 175°C VR = 1200V , TJ = 150°C QC = ∫VR C(V) dv 0 VR ...


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