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80R4K5P7

Infineon
Part Number 80R4K5P7
Manufacturer Infineon
Description MOSFET
Published Aug 15, 2019
Detailed Description IPU80R4K5P7 MOSFET 800VCoolMOSªP7PowerTransistor Thelatest800VCoolMOS™P7seriessetsanewbenchmarkin800V su...
Datasheet PDF File 80R4K5P7 PDF File

80R4K5P7
80R4K5P7

Overview
IPU80R4K5P7 MOSFET 800VCoolMOSªP7PowerTransistor Thelatest800VCoolMOS™P7seriessetsanewbenchmarkin800V superjunctiontechnologiesandcombinesbest-in-classperformancewith stateoftheartease-of-use,resultingfromInfineon’sover18years pioneeringsuperjunctiontechnologyinnovation.
Features •Best-in-classFOMRDS(on)*Eoss;reducedQg,Ciss,andCoss •Best-in-classDPAKRDS(on) •Best-in-classV(GS)thof3VandsmallestV(GS)thvariationof±0.
5V •IntegratedZenerDiodeESDprotection •Fullyqualifiedacc.
JEDECforIndustrialApplications •Fullyoptimizedportfolio Benefits •Best-in-classperformance •Enablinghigherpowerdensitydesigns,BOMsavingsandlower assemblycosts •Easytodriveandtoparallel •BetterproductionyieldbyreducingESDrelatedfailures •Lessproductionissuesandreducedfieldreturns •Easytoselectrightpartsforfinetuningofdesigns Potentialapplications RecommendedforhardandsoftswitchingflybacktopologiesforLED Lighting,lowpowerChargersandAdapters,Audio,AUXpowerand Industrialpower.
AlsosuitableforPFCstageinConsumerapplications andSolar.
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseperatetotempolesisgenerallyrecommended.
IPAK tab 12 3 Drain Pin 2, Tab Gate Pin 1 Source Pin 3 Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj=25°C 800 V RDS(on),max 4.
5 Ω Qg,typ 4 nC ID 1.
5 A Eoss @ 500V 0.
4 µJ VGS(th),typ 3 V ESD class (HBM) 1C - Type/OrderingCode IPU80R4K5P7 Package PG-TO251-3 Marking 80R4K5P7 RelatedLinks see Appendix A Final Data Sheet 1 Rev.
2.
2,2022-01-13 800VCoolMOSªP7PowerTransistor IPU80R4K5P7 TableofContents Description .
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