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PE42412

Peregrine Semiconductor
Part Number PE42412
Manufacturer Peregrine Semiconductor
Description SP12T RF Switch
Published Sep 2, 2019
Detailed Description PE42412 Document Category: Product Specification UltraCMOS® SP12T RF Switch, 10 MHz–8 GHz Features • High isolation: 39...
Datasheet PDF File PE42412 PDF File

PE42412
PE42412

Overview
PE42412 Document Category: Product Specification UltraCMOS® SP12T RF Switch, 10 MHz–8 GHz Features • High isolation: 39 dB @ 6 GHz • Low insertion loss: 1.
3 dB @ 6 GHz • Fast switching time of 232 ns • Power handling of 33 dBm CW • Logic select (LS) pin provides maximum control logic flexibility • Terminated all-off state mode • Packaging – 32-lead 5 × 5 × 0.
85 mm QFN Applications • Wireless infrastructure • Wireless applications up to 8 GHz • Filter bank switching • RF signal routing Figure 1 • PE42412 Functional Diagram RFC RF1 RF2 RF3 RF4 RF5 RF6 CMOS Control Driver and ESD V1 V2 V3 V4 RF12 RF11 RF10 RF9 RF8 RF7 switch configuration 50Ω Product Description The PE42412 is a HaRP™ technology-enhanced absorptive SP12T RF switch that supports a frequency range from 10 MHz to 8 GHz.
It delivers high isolation, low insertion loss and fast switching time, making this device ideal for filter bank switching and RF signal routing in wireless infrastructure and wireless applications up to 8 GHz.
No blocking capacitors are required if DC voltage is not present on the RF ports.
The PE42412 is manufactured on Peregrine’s UltraCMOS® process, a patented advanced form of silicon-oninsulator (SOI) technology.
Peregrine’s HaRP technology enhancements deliver high linearity and excellent harmonics performance.
It is an innovative feature of the UltraCMOS process, offering the performance of GaAs with the economy and integration of conventional CMOS.
©2017, Peregrine Semiconductor Corporation.
All rights reserved.
• Headquarters: 9380 Carroll Park Drive, San Diego, CA, 92121 Product Specification www.
psemi.
com DOC-75868-3 – (03/2017) PE42412 SP12T RF Switch Absolute Maximum Ratings Exceeding absolute maximum ratings listed in Table 1 may cause permanent damage.
Operation should be restricted to the limits in Table 2.
Operation between operating range maximum and absolute maximum for extended periods may reduce reliability.
ESD Precautions When handling this UltraCMOS de...


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