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HX3400

Part Number	HX3400
Manufacturer	HXDZ
Description	P-Channel MOSFET
Published	Sep 15, 2019
Detailed Description	SOT-23-3 Plastic-Encapsulate Transistors HX3400 MOSFET(N-Channel) FEATURES High Power and current handing capability Lea...
Datasheet	HX3400 PDF File

Overview

SOT-23-3 Plastic-Encapsulate Transistors HX3400 MOSFET(N-Channel) FEATURES High Power and current handing capability Lead free product is acquired Surface Mout Package MARKING: XORB MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VDS Drain-Source voltage 30 V VGS Gate-Source voltage ±12 V ID Drain current 5.
8 A PD Power Dissipation 1.
4 W Tj Junction Temperature -55-150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Drain-Source Breakdown Voltage V(BR)DSS VGS=0V,ID=250uA 30 V Gate-Threshold Voltage Vth(GS) VDS= VGS, ID=250 uA ...

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