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1N2927

Advanced Semiconductor
Part Number 1N2927
Manufacturer Advanced Semiconductor
Description GERMANIUM TUNNEL DIODE
Published Mar 23, 2005
Detailed Description 1N2927 GERMANIUM TUNNEL DIODE PACKAGE STYLE TO-18 DESCRIPTION: The 1N2927 is Designed for Switching Applications in In...
Datasheet PDF File 1N2927 PDF File

1N2927
1N2927


Overview
1N2927 GERMANIUM TUNNEL DIODE PACKAGE STYLE TO-18 DESCRIPTION: The 1N2927 is Designed for Switching Applications in Industrial and Miitary Applications.
MAXIMUM RATINGS IF TJ TSTG TSOLD O O 500 µA -65 C to +150 C -65 C to +200 C 10 S/250 C O O O NONE CHARACTERISTICS SYMBOL IP IV VP VV VF IR TC = 25 C O TEST CONDITIONS MINIMUM 90 TYPICAL MAXIMUM 110 35 75 475 UNITS µA µA mV mV mV mA IF = 110 µA 600 1000 1.
0 A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice.
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