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BTA2008-1000D

WeEn
Part Number BTA2008-1000D
Manufacturer WeEn
Description 3Q Hi-Com Triac
Published Oct 3, 2019
Detailed Description BTA2008-1000D 3Q Hi-Com Triac 28 September 2016 Product data sheet 1. General description Planar passivated high commu...
Datasheet PDF File BTA2008-1000D PDF File

BTA2008-1000D
BTA2008-1000D

Overview
BTA2008-1000D 3Q Hi-Com Triac 28 September 2016 Product data sheet 1.
General description Planar passivated high commutation three quadrant triac in a SOT54 (TO-92) plastic package.
This "series D" triac balances the requirements of commutation performance and gate sensitivity and is intended for interfacing with low power drivers and logic ICs including microcontrollers.
2.
Features and benefits • 3Q technology for improved noise immunity • Direct gate triggering from low power drivers and logic ICs • High commutation capability with very sensitive gate • High voltage capability • Planar passivated for voltage ruggedness and reliability • Triggering in three quadrants only • Very sensitive gate for easy logic level triggering 3.
Applications • Low power motor controls • Small inductive loads e.
g.
solenoids, door locks, water valves • Small loads in large white goods 4.
Quick reference data Table 1.
Quick reference data Symbol Parameter Conditions VDRM repetitive peak offstate voltage IT(RMS) RMS on-state current full sine wave; Tlead ≤ 70 °C; Fig.
1; Fig.
2; Fig.
3 ITSM non-repetitive peak on- full sine wave; Tj(init) = 25 °C; state current tp = 20 ms; Fig.
4; Fig.
5 full sine wave; Tj(init) = 25 °C; tp = 16.
7 ms Tj junction temperature Static characteristics IGT gate trigger current VD = 12 V; IT = 0.
1 A; T2+ G+; Tj = 25 °C; Fig.
7 VD = 12 V; IT = 0.
1 A; T2+ G-; Tj = 25 °C; Fig.
7 Min Typ Max Unit - - 1000 V - - 0.
8 A - - 9A - - 9.
9 A - - 125 °C 0.
25 - 5 mA 0.
25 - 5 mA WeEn Semiconductors BTA2008-1000D 3Q Hi-Com Triac Symbol Parameter IH holding current VT on-state voltage Dynamic characteristics dVD/dt rate of rise of off-state voltage dIcom/dt rate of change of commutating current Conditions VD = 12 V; IT = 0.
1 A; T2- G-; Tj = 25 °C; Fig.
7 VD = 12 V; Tj = 25 °C; Fig.
9 IT = 0.
85 A; Tj = 25 °C; Fig.
10 VDM = 670 V; Tj = 125 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit VD = 400 V; Tj = 125 °C; IT(RMS) = 0.
8...


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