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BTA208X-600D

WeEn
Part Number BTA208X-600D
Manufacturer WeEn
Description 3Q Hi-Com Triac
Published Oct 3, 2019
Detailed Description BTA208X-600D 3Q Hi-Com Triac 19 September 2018 Product data sheet 1. General description Planar passivated high commut...
Datasheet PDF File BTA208X-600D PDF File

BTA208X-600D
BTA208X-600D

Overview
BTA208X-600D 3Q Hi-Com Triac 19 September 2018 Product data sheet 1.
General description Planar passivated high commutation three quadrant triac in a SOT186A "full pack" plastic package.
This "series D" triac balances the requirements of commutation performance and gate sensitivity.
The "very sensitive gate" "series D" is intended for interfacing with low power drivers including microcontrollers.
2.
Features and benefits • 3Q technology for improved noise immunity • Direct interfacing with low power drivers and microcontrollers • Good immunity to false turn-on by dV/dt • High commutation capability with very sensitive gate • High voltage capability • Isolated mounting base package • Planar passivated for voltage ruggedness and reliability • Triggering in three quadrants only 3.
Applications • Electronic thermostats • General purpose motor controls 4.
Quick reference data Table 1.
Quick reference data Symbol Parameter Conditions VDRM repetitive peak offstate voltage IT(RMS) RMS on-state current full sine wave; Th ≤ 73 °C; Fig.
1; Fig.
2; Fig.
3 ITSM non-repetitive peak on- full sine wave; Tj(init) = 25 °C; state current tp = 20 ms; Fig.
4; Fig.
5 full sine wave; Tj(init) = 25 °C; tp = 16.
7 ms Tj junction temperature Static characteristics IGT gate trigger current VD = 12 V; IT = 0.
1 A; T2+ G+; Tj = 25 °C; Fig.
7 VD = 12 V; IT = 0.
1 A; T2+ G-; Tj = 25 °C; Fig.
7 Min Typ Max Unit - - 600 V - - 8A - - 65 A - - 71 A - - 125 °C - - 5 mA - - 5 mA WeEn Semiconductors BTA208X-600D 3Q Hi-Com Triac Symbol Parameter IH holding current VT on-state voltage Dynamic characteristics dVD/dt rate of rise of off-state voltage dIcom/dt rate of change of commutating current Conditions VD = 12 V; IT = 0.
1 A; T2- G-; Tj = 25 °C; Fig.
7 VD = 12 V; Tj = 25 °C; Fig.
9 IT = 10 A; Tj = 25 °C; Fig.
10 VDM = 402 V; Tj = 110 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit VD = 400 V; Tj = 125 °C; IT(RMS) = 8 A; dVcom/dt = 10 V/µs; gate open cir...


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