DatasheetsPDF.com

BTA412Y-800C

WeEn
Part Number BTA412Y-800C
Manufacturer WeEn
Description 3Q Hi-ComTriac
Published Oct 3, 2019
Detailed Description BTA412Y-800C 3Q Hi-Com Triac 12 September 2018 Product data sheet 1. General description Planar passivated high commut...
Datasheet PDF File BTA412Y-800C PDF File

BTA412Y-800C
BTA412Y-800C

Overview
BTA412Y-800C 3Q Hi-Com Triac 12 September 2018 Product data sheet 1.
General description Planar passivated high commutation three quadrant triac in a SOT78D (TO-220AB) internally insulated plastic package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur.
This "series C" triac will commutate the full RMS current at the maximum rated junction temperature without the aid of a snubber.
This device has high Tj operating capability and an internally isolated mounting base.
2.
Features and benefits • 3Q technology for improved noise immunity • High commutation capability with maximum false trigger immunity • High immunity to false turn-on by dV/dt • High surge capability • High Tj(max) • Isolated mounting base with 2500 V (RMS) isolation • Less sensitive gate for high noise immunity • Planar passivated for voltage ruggedness and reliability • Triggering in three quadrants only 3.
Applications • Electronic thermostats (heating and cooling) • High power motor controls • Rectifier-fed DC inductive loads e.
g.
DC motors and solenoids 4.
Quick reference data Table 1.
Quick reference data Symbol Parameter Conditions VDRM repetitive peak offstate voltage IT(RMS) RMS on-state current full sine wave; Tmb ≤ 116 °C; Fig.
1; Fig.
2; Fig.
3 ITSM non-repetitive peak on- full sine wave; Tj(init) = 25 °C; state current tp = 20 ms; Fig.
4; Fig.
5 full sine wave; Tj(init) = 25 °C; tp = 16.
7 ms Tj junction temperature Static characteristics IGT gate trigger current VD = 12 V; IT = 0.
1 A; T2+ G+; Tj = 25 °C; Fig.
7 Min Typ Max Unit - - 800 V - - 12 A - - 140 A - - 153 A - - 150 °C 2- 35 mA WeEn Semiconductors BTA412Y-800C 3Q Hi-Com Triac Symbol Parameter IH holding current VT on-state voltage Dynamic characteristics dVD/dt rate of rise of off-state voltage dIcom/dt rate of change of commutating current Conditions VD = 12 V; IT = 0.
1 A; T2+ G-; Tj = 25 °C; Fig.
7 VD = 12 V; IT = 0.
1 A; T2- G-; Tj = 25 °C; Fig.
7 VD =...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)