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TPGEW1S03H

Part Number	TPGEW1S03H
Manufacturer	Excelitas
Description	Low-Cost High-Power Laser-Diode
Published	Oct 5, 2019
Detailed Description	DATASHEET Photon Detection PGEW Series of Single- and Multi-epi 905 nm Pulsed Semiconductor Lasers Low-Cost High-Power L...
Datasheet	TPGEW1S03H PDF File

Overview

DATASHEET Photon Detection PGEW Series of Single- and Multi-epi 905 nm Pulsed Semiconductor Lasers Low-Cost High-Power Laser-Diode Family The PGEW Series is ideal for commercial range finding applications.
Excelitas Technologies’ PGEW Series of single- and multi-epi 905 nm pulsed semiconductor lasers consists of a series of devices having up to four active lasing layers epitaxially grown on a single GaAs substrate chip.
This multi-layer design multiplies the output power by the number of epi-layers.
For example, the QPGEW quad laser at 225 µm active layer width, which has four epitaxially grown lasing layers, delivers an output peak power close to 100 W.
The T1 ¾ (TO-like) plastic encapsulated package complements Excelitas' epi-cavity lasers in hermetic metal packages and are ideally suited for high volume applications.
The lasers employ Excelitas’ novel multi-active area laser chips to deliver high output power in a small emitting area.
The laser chips of the PGEW family feature stri...

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