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VS-MBR1035-M3

Vishay
Part Number VS-MBR1035-M3
Manufacturer Vishay
Description High Performance Schottky Rectifier
Published Oct 8, 2019
Detailed Description www.vishay.com VS-MBR1035-M3, VS-MBR1045-M3 Vishay Semiconductors High Performance Schottky Rectifier, 10 A Base cath...
Datasheet PDF File VS-MBR1035-M3 PDF File

VS-MBR1035-M3
VS-MBR1035-M3

Overview
www.
vishay.
com VS-MBR1035-M3, VS-MBR1045-M3 Vishay Semiconductors High Performance Schottky Rectifier, 10 A Base cathode 2 2L TO-220AC 13 Cathode Anode PRIMARY CHARACTERISTICS IF(AV) VR VF at IF IRM max.
TJ max.
EAS Package 10 A 35 V, 45 V 0.
57 V 15 mA at 125 °C 150 °C 8 mJ 2L TO-220AC Circuit configuration Single FEATURES • 150 °C TJ operation • High frequency operation • Low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • Guard ring for enhanced ruggedness and long term reliability • Designed and qualified according to JEDEC®-JESD 47 • Material categorization: for definitions of compliance please see www.
vishay.
com/doc?99912 DESCRIPTION This Schottky rectifier has been optimized for low reverse leakage at high temperature.
The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature.
Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS IF(AV) Rectangular waveform IFRM TC = 135 °C VRRM IFSM VF tp = 5 μs sine 10 Apk, TJ = 125 °C TJ Range VALUES 10 20 35/45 1060 0.
57 -65 to +150 UNITS A V A V °C VOLTAGE RATINGS PARAMETER SYMBOL Maximum DC reverse voltage Maximum working peak reverse voltage VR VRWM VS-MBR1035-M3 35 VS-MBR1045-M3 45 UNITS V ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average forward current Peak repetitive forward current IF(AV) IFRM Non-repetitive peak surge current IFSM Non-repetitive avalanche energy Repetitive avalanche current EAS IAR TEST CONDITIONS TC = 135 °C, rated VR Rated VR, square wave, 20 kHz, TC = 135 °C Following any rated load 5 μs sine or 3 μs rect.
pulse condition and with rated VRRM applied Surge applied at rated load conditions halfwave, single phase, 60 Hz TJ = 25 °C, IAS = 2 A, L = 4 mH Current decaying linearly to zero in 1 μs Frequency ...


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