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J13007-1

Fairchild Semiconductor
Part Number J13007-1
Manufacturer Fairchild Semiconductor
Description High Voltage Fast-Switching NPN Power Transistor
Published Oct 19, 2019
Detailed Description FJP13007 — High Voltage Fast-Switching NPN Power Transistor November 2014 FJP13007 High Voltage Fast-Switching NPN Pow...
Datasheet PDF File J13007-1 PDF File

J13007-1
J13007-1

Overview
FJP13007 — High Voltage Fast-Switching NPN Power Transistor November 2014 FJP13007 High Voltage Fast-Switching NPN Power Transistor Features • High Voltage High Speed Power Switch Application • High Voltage Capability • High Switching Speed • Suitable for Electronic Ballast and Switching Mode Power Supply 1 TO-220 1.
Base 2.
Collector 3.
Emitter Ordering Information Part Number FJP13007TU FJP13007H1TU FJP13007H1TU_F080 FJP13007H2TU FJP13007H2TU_F080 Top Mark J13007 J13007-1 J13007-1 J13007-2 J13007-2 Package TO-220 3L (Dual Gauge) TO-220 3L (Single Gauge) TO-220 3L (Dual Gauge) TO-220 3L (Dual Gauge) TO-220 3L (Dual Gauge) Packing Method Rail Rail Rail Rail Rail Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device.
The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Values are at TC = 25°C unless otherwise noted.
Symbol Parameter Value Unit VCBO VCEO VEBO IC ICP IB PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current (DC) Collector Dissipation (TC = 25°C) Junction Temperature Storage Temperature Range 700 400 9 8 16 4 80 150 -65 to 150 V V V A A A W °C °C © 2005 Fairchild Semiconductor Corporation FJP13007 Rev.
1.
1.
0 www.
fairchildsemi.
com FJP13007 — High Voltage Fast-Switching NPN Power Transistor Electrical Characteristics Values are at TC = 25°C unless otherwise noted.
Symbol BVCEO IEBO hFE1 hFE2 VCE(sat) VBE(sat) fT Cob tON tSTG tF Parameter Collector-Emitter Breakdown Voltage Emitter Cut-Off Current DC Current Gain(1) DC Current Gain(1) Collector-Emitter Saturation Voltage Collector-Base Saturation Voltage Current Gain Bandwidth Product Output Capacit...


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