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2N2905AL

Part Number	2N2905AL
Manufacturer	VPT
Description	Radiation Hardened PNP Silicon Switching Transistors
Published	Oct 28, 2019
Detailed Description	2N2904, 2N2904A, 2N2904AL 2N2905, 2N2905A, 2N2905AL Radiation Hardened PNP Silicon Switching Transistors Features • Qual...
Datasheet	2N2905AL PDF File

Overview

2N2904, 2N2904A, 2N2904AL 2N2905, 2N2905A, 2N2905AL Radiation Hardened PNP Silicon Switching Transistors Features • Qualified to MIL-PRF-19500/290 • Available in JAN, JANTX, JANTXV, JANS and JANSR • Radiation Tolerant Levels M, D, P, L and R • TO-39 and TO-5 package styles • General Purpose Switching and Amplifier Applications Rev.
V3 Electrical Specifications @ TA = 25°C Parameter Off Characteristics: Collector - Emitter Breakdown Test Conditions IC = -10 mA dc 2N2904, 2N2905 2N2904A, 2N2905A 2N2904AL, 2N2905AL Collector - Base Cutoff Current VCB = -60 V dc Symbol Units Minimum Maximum V(BR)CEO V dc -40 -60 -60 ICBO1 µA dc — — -10 Collector - Base Cutoff Current Emitter - Base Cutoff Current VCB = -50 V dc 2N2904, 2N2905 2N2904A, 2N2905A 2N2904AL, 2N2905AL VEB = -5.
0 V dc ICBO2 nA dc — IEBO1 µA dc — -20 -10 -10 -10 Emitter - Base Cutoff Current VEB = -3.
5 V dc IEBO2 nA dc — Collector-Emitter Cutoff Current 2N2904, 2N2905; VCE = -40V dc 2N2904A, 2N2904AL; VCE =...

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