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2N2905

STMicroelectronics
Part Number 2N2905
Manufacturer STMicroelectronics
Description Silicon Planar PNP Transistor
Published Mar 23, 2005
Detailed Description 2N2905 2N2907 GENERAL PURPOSE AMPLIFIERS AND SWITCHES DESCRIPTION The 2N2905 and 2N2907 are silicon planar epitaxial PNP...
Datasheet PDF File 2N2905 PDF File

2N2905
2N2905

Overview
2N2905 2N2907 GENERAL PURPOSE AMPLIFIERS AND SWITCHES DESCRIPTION The 2N2905 and 2N2907 are silicon planar epitaxial PNP transistors in Jedec TO-39 (for 2N2905) and in Jedec TO-18 (for 2N2907) metal case.
They are designed for high speed saturated switching and general purpose application.
2N2905 approved to CECC 50002-102, 2N2907 approved to CECC 50002-103 available on request.
TO-18 TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC P t ot Parameter Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Total Dissipation at T amb ≤ 25 C for 2N2905 for 2N2907 at T case ≤ 25 o C for 2N2905 for 2N2907 St orage Temperature Max.
Operating Junction Temperature o Value -60 -40 -5 -0.
6 0.
6 0.
4 3 1.
8 -65 to 200 200 Unit V V V A W W W W o o T stg Tj C C 1/5 November 1997 2N2905/2N2907 THERMAL DATA T O-39 R t hj-ca se R t hj- amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max 58.
3 292 TO -18 97.
3 437.
5 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CBO I CEX I BEX Parameter Collector Cut-off Current (IE = 0) Collector Cut-off Current (V BE = -0.
5V) Base Cut-off Current (V BE = -0.
5V) Test Cond ition s V CB = -50 V V CB = -50 V V CE = -30 V V CE = -30 V I C = -10 µ A -60 Tc ase = 150 C o Min.
Typ .
Max.
-20 -20 -50 -50 Un it nA µA nA nA V V ( BR)CBO ∗ Collector-Base Breakdown Voltage (I E = 0) V ( BR)CEO ∗ Collector-Emitter Breakdown Voltage (I B = 0) V (BR)EBO ∗ Emitter-Base Breakdown Voltage (I C = 0) V CE(sat )∗ V BE(s at)∗ hFE∗ Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current G ain I C = -10 mA -40 V I E = -10 µ A -5 V I C = -150 mA I C = -500 mA I C = -150 mA I C = -500 mA IC IC IC IC IC = = = = = -0.
1 mA -1 mA -10 mA -150 mA -500 mA IB = -15 mA IB = -50 mA IB = -15 mA IB = -50 mA V CE = -10 V V CE = -10 V V CE = -10 V V CE = -10 V V CE = -10 V f = ...


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