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FFSH20120A

ON Semiconductor
Part Number FFSH20120A
Manufacturer ON Semiconductor
Description Silicon Carbide Schottky Diode
Published Nov 7, 2019
Detailed Description Silicon Carbide (SiC) Schottky Diode – EliteSiC, 20 A, 1200 V, D1, TO-247-2L FFSH20120A Description Silicon Carbide (SiC...
Datasheet PDF File FFSH20120A PDF File

FFSH20120A
FFSH20120A

Overview
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 20 A, 1200 V, D1, TO-247-2L FFSH20120A Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon.
No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor.
System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
Features • Max Junction Temperature 175°C • Avalanche Rated 200 mJ • High Surge Current Capacity • Positive Tempera...


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