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FFSD10120A

ON Semiconductor
Part Number FFSD10120A
Manufacturer ON Semiconductor
Description Silicon Carbide Schottky Diode
Published Nov 7, 2019
Detailed Description FFSD10120A — Silicon Carbide Schottky Diode www.onsemi.com FFSD10120A Silicon Carbide Schottky Diode 1200 V, 10 A Feat...
Datasheet PDF File FFSD10120A PDF File

FFSD10120A
FFSD10120A

Overview
FFSD10120A — Silicon Carbide Schottky Diode www.
onsemi.
com FFSD10120A Silicon Carbide Schottky Diode 1200 V, 10 A Features • Max Junction Temperature 175 °C • Avalanche Rated 100 mJ • High Surge Current Capacity • Positive Temperature Coefficient • Ease of Paralleling • No Reverse Recovery / No Forward Recovery Applications • General Purpose • SMPS, Solar Inverter, UPS • Power Switching Circuits Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon.
No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor.
System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size & cost.
3 1 2 D-PAK (TO-252) 1,3 Cathode 2.
Anode Absolute Maximum Ratings TC = 25 °C unless otherwise not...


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