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DF2S6.2ASL

Toshiba
Part Number DF2S6.2ASL
Manufacturer Toshiba
Description ESD Protection Diode
Published Nov 9, 2019
Detailed Description ESD Protection Diodes Silicon Epitaxial Planar DF2S6.2ASL DF2S6.2ASL 1. Applications • ESD Protection Note: This produ...
Datasheet PDF File DF2S6.2ASL PDF File

DF2S6.2ASL
DF2S6.2ASL

Overview
ESD Protection Diodes Silicon Epitaxial Planar DF2S6.
2ASL DF2S6.
2ASL 1.
Applications • ESD Protection Note: This product is designed for protection against electrostatic discharge (ESD) and is not intended for any other purpose, including, but not limited to, voltage regulation.
2.
Packaging and Internal Circuit 1: Cathode 2: Anode SL2 3.
Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25) Characteristics Symbol Note Rating Unit Electrostatic discharge voltage (IEC61000-4-2)(Contact) Electrostatic discharge voltage (IEC61000-4-2)(Air) VESD (Note 1) ±30 kV Peak pulse power(tp = 8/20 µs) Peak pulse current(tp = 8/20 µs) Junction temperature Storage temperature PPK IPP (Note 2) Tj Tstg 37 2.
5 150 -55 to 150 W A   Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating c...


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