DatasheetsPDF.com

STGB30M65DF2

Part Number	STGB30M65DF2
Manufacturer	STMicroelectronics
Description	Trench gate field-stop IGBT
Published	Nov 19, 2019
Detailed Description	STGB30M65DF2 Trench gate field-stop IGBT, M series 650 V, 30 A low-loss in a D2PAK package Datasheet - production data ...
Datasheet	STGB30M65DF2 PDF File

Overview

STGB30M65DF2 Trench gate field-stop IGBT, M series 650 V, 30 A low-loss in a D2PAK package Datasheet - production data TAB 2 3 1 D²PAK Figure 1: Internal schematic diagram Features  6 µs of short-circuit withstand time  VCE(sat) = 1.
55 V (typ.
) @ IC = 30 A  Tight parameters distribution  Safer paralleling  Low thermal resistance  Soft and very fast recovery antiparallel diode Applications  Motor control  UPS  PFC Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure.
The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit f...

Similar Datasheet

STGB30M65DF2 Trench gate field-stop IGBT - STMicroelectronics

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)