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TPN4R712MD

Toshiba
Part Number TPN4R712MD
Manufacturer Toshiba
Description Silicon P-Channel MOSFET
Published Nov 19, 2019
Detailed Description MOSFETs Silicon P-Channel MOS (U-MOS) TPN4R712MD 1. Applications • Lithium-Ion Secondary Batteries • Power Management S...
Datasheet PDF File TPN4R712MD PDF File

TPN4R712MD
TPN4R712MD

Overview
MOSFETs Silicon P-Channel MOS (U-MOS) TPN4R712MD 1.
Applications • Lithium-Ion Secondary Batteries • Power Management Switches 2.
Features (1) Low drain-source on-resistance: RDS(ON) = 3.
8 mΩ (typ.
) (VGS = -4.
5 V) (2) Low leakage current: IDSS = -10 µA (max) (VDS = -20 V) (3) Enhancement mode: Vth = -0.
5 to -1.
2 V (VDS = -10 V, ID = -1.
0 mA) 3.
Packaging and Internal Circuit TPN4R712MD TSON Advance 1,2,3: Source 4: Gate 5, 6, 7, 8: Drain ©2019 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2014-12 2019-10-30 Rev.
5.
0 TPN4R712MD 4.
Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Power dissipation (Tc = 25  ) (t = 1 ms) (Tc = 25  ) (t = 10 s) (Note 1) (Note 1) (Note 2) VDSS VGSS ID IDP PD -20 ±12 -36 -180 42 1.
9 V A W Power dissipation (t = 10 s) (Note 3) 0.
7 Single-pulse avalanche energy Single-pulse avalanche current Channel temperature Storage temperature (Note 4) EAS IAS Tch Tstg 320 -36 150 -55 to 150 mJ A  Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
5.
Thermal Characteristics Characteristics Channel-to-case thermal resistance Channel-to-ambient thermal resistance Channel-to-ambient thermal resistance (Tc = 25 ) (t = 10 s) (t = 10 s) (Note 2) (Note 3) Note 1: Ensure that the channel tempera...


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