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CUS10S40

Toshiba
Part Number CUS10S40
Manufacturer Toshiba
Description Schottky Barrier Diode
Published Nov 25, 2019
Detailed Description Schottky Barrier Diode Silicon Epitaxial CUS10S40 1. Applications • High-Speed Switching 2. Features (1) Small package (...
Datasheet PDF File CUS10S40 PDF File

CUS10S40
CUS10S40

Overview
Schottky Barrier Diode Silicon Epitaxial CUS10S40 1.
Applications • High-Speed Switching 2.
Features (1) Small package (2) Low forward voltage: VF(2) = 0.
45 V (typ.
) 3.
Packaging and Internal Circuit USC CUS10S40 1: Cathode 2: Anode Start of commercial production 2013-09 1 2014-04-07 Rev.
2.
0 CUS10S40 4.
Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Note Rating Unit Peak reverse voltage VRM 40 V Average rectified current IO (Note 1) 1.
0 A Non-repetitive peak forward surge current IFSM (Note 2) 5 A Junction temperature Tj 125  Storage temperature Tstg -55 to 125  Note: Using continuously under heavy loads (e.
g.
the ap...


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