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EPC2031

EPC
Part Number EPC2031
Manufacturer EPC
Description Power Transistor
Published Nov 26, 2019
Detailed Description eGaN® FET DATASHEET EPC2031 – Enhancement Mode Power Transistor VDS , 60 V RDS(on) , 2.6 mΩ ID , 48 A D G S EPC2031 ...
Datasheet PDF File EPC2031 PDF File

EPC2031
EPC2031

Overview
eGaN® FET DATASHEET EPC2031 – Enhancement Mode Power Transistor VDS , 60 V RDS(on) , 2.
6 mΩ ID , 48 A D G S EPC2031 EFFICIENT POWER CONVERSION HAL Gallium Nitride’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(on), while its lateral device structure and majority carrier diode provide exceptionally low QG and zero QRR.
The end result is a device that can handle tasks where very high switching frequency, and low on-time are beneficial as well as those where on-state losses dominate.
Maximum Ratings PARAMETER VALUE VDS Drain-to-Source Voltage (Continuous) Drain-to-Source Voltage (up to 10,000 5 ms pulses at 150°C) ID Continuous (TA = 25°C,...


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