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CSD19532Q5B

Texas Instruments
Part Number CSD19532Q5B
Manufacturer Texas Instruments
Description 100V N-Channel Power MOSFET
Published Dec 1, 2019
Detailed Description Product Folder Order Now Technical Documents Tools & Software Support & Community CSD19532Q5B SLPS414B – DECEMBER 2...
Datasheet PDF File CSD19532Q5B PDF File

CSD19532Q5B
CSD19532Q5B

Overview
Product Folder Order Now Technical Documents Tools & Software Support & Community CSD19532Q5B SLPS414B – DECEMBER 2013 – REVISED MAY 2017 CSD19532Q5B 100 V N-Channel NexFET™ Power MOSFET 1 Features •1 Low Qg and Qgd • Low Thermal Resistance • Avalanche Rated • Pb-Free Terminal Plating • RoHS Compliant • Halogen Free • SON 5-mm × 6-mm Plastic Package Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (10 V) Qgd Gate Charge Gate to Drain RDS(on) Drain-to-Source On Resistance VGS(th) Threshold Voltage TYPICAL VALUE 100 48 8.
7 VGS = 6 V VGS = 10 V 2.
6 4.
6 4 UNIT V nC nC mΩ mΩ V 2 Applications • Synchronous Rectifier for Offline and Isolated DCDC Converters • Motor Control 3 Description This 100 V, 4 mΩ, SON 5-mm × 6-mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications.
Top View S1 8D S2 7D S3 G4 D 6D 5D P0093-01 Device CSD19532Q5B CSD19532Q5BT .
Ordering Information(1) Media Qty Package 13-Inch Reel 2500 SON 5 x 6 mm 13-Inch Reel 250 Plastic Package Ship Tape and Reel (1) For all available packages, see the orderable addendum at the end of the data sheet.
Absolute Maximum Ratings TA = 25°C VDS Drain-to-Source Voltage VGS Gate-to-Source Voltage Continuous Drain Current (Package limited) VALUE 100 ±20 100 UNIT V V ID Continuous Drain Current (Silicon limited), TC = 25°C Continuous Drain Current(1) 140 17 IDM Pulsed Drain Current(2) Power Dissipation(1) PD Power Dissipation, TC = 25°C 400 3.
1 195 TJ, Operating Junction and Tstg Storage Temperature Range –55 to 150 EAS Avalanche Energy, single pulse ID = 74 A, L = 0.
1 mH, RG = 25 Ω 274 A A W °C mJ (1) Typical RθJA = 40°C/W on a 1-inch2, 2-oz.
Cu pad on a 0.
06inch thick FR4 PCB.
(2) Max RθJC = 0.
8°C/W, Pulse duration ≤100 µs, duty cycle ≤1% RDS(on) - On-State Resistance (mΩ) VGS - Gate-to-Source Voltage (V) RDS(on) vs VGS 20 18 TC = 25°C,I D = 17A TC = 125°C,I D = 17A 16 14 12 10 8 6 4 2 0 0 2 4 6 8 10 12 ...


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