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CSD17571Q2

Texas Instruments
Part Number CSD17571Q2
Manufacturer Texas Instruments
Description 30V N-Channe Power MOSFET
Published Dec 6, 2019
Detailed Description Product Folder Sample & Buy Technical Documents Tools & Software Support & Community CSD17571Q2 SLPS393A – OCTOBER ...
Datasheet PDF File CSD17571Q2 PDF File

CSD17571Q2
CSD17571Q2

Overview
Product Folder Sample & Buy Technical Documents Tools & Software Support & Community CSD17571Q2 SLPS393A – OCTOBER 2013 – REVISED JANUARY 2015 CSD17571Q2 30V N-Channel NexFET™ Power MOSFETs 1 Features •1 Low Qg and Qgd • Low Thermal Resistance • Avalanche Rated • Pb-Free Terminal Plating • RoHS Compliant • Halogen Free • SON 2 mm × 2 mm Plastic Package 2 Applications • Optimized for Load Switch Applications • Storage, Tablets, and Handheld Devices • Optimized for Control FET Applications 3 Description This 30 V, 20 mΩ, SON 2×2 NexFET™ power MOSFET is designed to minimize losses in power conversion and load management applications, while offering excellent thermal performance for the size of the package.
Top View D1 D2 D 6D 5D G3 S 4S P0108-01 Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (4.
5 V) Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On-Resistance VGS(th) Threshold Voltage TYPICAL VALUE 30 2.
4 0.
6 VGS = 4.
5 V VGS = 10 V 1.
6 24 20 UNIT V nC nC mΩ mΩ V Device CSD17571Q2 Ordering Information(1) Media Qty Package 7-Inch Reel 3000 SON 2 x 2 mm Plastic Package Ship Tape and Reel (1) For all available packages, see the orderable addendum at the end of the data sheet.
Absolute Maximum Ratings TA = 25°C VDS Drain-to-Source Voltage VGS Gate-to-Source Voltage Continuous Drain Current (Package Limit) ID Continuous Drain Current(1) IDM Pulsed Drain Current, TA = 25°C(2) PD Power Dissipation(1) TJ, Operating Junction and Tstg Storage Temperature Range EAS Avalanche Energy, single pulse ID = 12 A, L = 0.
1 mH, RG = 25 Ω VALUE 30 ±20 22 7.
6 39 2.
5 UNIT V V A A A W –55 to 150 °C 7.
2 mJ (1) RθJA = 50 on 1 in² Cu (2 oz.
) on 0.
060" thick FR4 PCB (2) Pulse duration 10 μs, duty cycle ≤2% RDS(on) - On-State Resistance (mΩ) VGS - Gate-to-Source Voltage (V) RDS(on) vs VGS 50 46 TC = 25°C,I D = 5A TC = 125°C,I D = 5A 42 38 34 30 26 22 18 14 10 0 2 4 6 8 10 12 14 16 18 20 VGS - Gate-to- Sourc...


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