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CSD17575Q3

Texas Instruments
Part Number CSD17575Q3
Manufacturer Texas Instruments
Description 30V N-Channe Power MOSFET
Published Dec 6, 2019
Detailed Description Product Folder Sample & Buy Technical Documents Tools & Software Support & Community CSD17575Q3 SLPS489A – JUNE 201...
Datasheet PDF File CSD17575Q3 PDF File

CSD17575Q3
CSD17575Q3


Overview
Product Folder Sample & Buy Technical Documents Tools & Software Support & Community CSD17575Q3 SLPS489A – JUNE 2014 – REVISED AUGUST 2014 CSD17575Q3 30-V N-Channel NexFET™ Power MOSFET 1 Features •1 Low Qg and Qgd • Low RDS(on) • Low Thermal Resistance • Avalanche Rated • Pb Free Terminal Plating • RoHS Compliant • Halogen Free • SON 3.
3 mm × 3.
3 mm Plastic Package 2 Applications • Point of Load Synchronous Buck Converter for Applications in Networking, Telecom, and Computing Systems • Optimized for Synchronous FET Applications Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (4.
5V) Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source OnResistance Vth Threshold Voltage TYPICAL VALUE 30 23 5.
4 VGS = 4.
5 V VGS = 10 V 1.
4 2.
6 1.
9 UNIT V nC nC mΩ V Device CSD17575Q3 CSD17575Q3T .
Ordering Information(1) Media Qty Package Ship 13-Inch Reel 2500 SON 3.
3 × 3.
3 mm Tape and 13-Inch Reel 250 Plastic Package Reel (1) For all available packages, see the orderable addendum at the end of the data sheet.
3 Description This 1.
9 mΩ, 30 V, SON 3×3 NexFET™ power MOSFET is designed to minimize losses in power conversion applications.
Top View S1 8D S2 7D S3 G4 D 6D 5D P0095-01 Absolute Maximum Ratings TA = 25°C VDS Drain-to-Source Voltage VGS Gate-to-Source Voltage Continuous Drain Current (Package Limit) VALUE 30 ±20 60 UNIT V V ID Continuous Drain Current (Silicon Limit), TC = 25°C Continuous Drain Current(1) IDM Pulsed Drain Current(2) Power Dissipation(1) PD Power Dissipation, TC = 25°C TJ, Operating Junction and Tstg Storage Temperature Range EAS Avalanche Energy, single pulse ID = 48, L = 0.
1 mH, RG = 25 Ω 182 27 240 2.
8 108 –55 to 150 A A W °C 115 mJ (1) Typical RθJA = 45°C/W on 1-inch2 Cu (2 oz.
) on 0.
060-inch thick FR4 PCB.
(2) Max RθJC = 1.
5°C/W, pulse duration ≤100 μs, duty cycle ≤1% RDS(on) - On-State Resistance (mΩ) VGS - Gate-to-Source Voltage (V) RDS(on) vs VGS 8 TC = 25°C,I D = 25A 7 TC = ...


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