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CSD17570Q5B

Texas Instruments
Part Number CSD17570Q5B
Manufacturer Texas Instruments
Description 30V N-Channe Power MOSFET
Published Dec 6, 2019
Detailed Description Product Folder Order Now Technical Documents Tools & Software Support & Community CSD17570Q5B SLPS471D – FEBRUARY 2...
Datasheet PDF File CSD17570Q5B PDF File

CSD17570Q5B
CSD17570Q5B

Overview
Product Folder Order Now Technical Documents Tools & Software Support & Community CSD17570Q5B SLPS471D – FEBRUARY 2014 – REVISED MAY 2017 CSD17570Q5B 30 V N-Channel NexFET™ Power MOSFET 1 Features •1 Ultra-Low Resistance • Low Thermal Resistance • Avalanche Rated • Pb Free Terminal Plating • RoHS Compliant • Halogen Free • SON 5 mm × 6 mm Plastic Package 2 Applications • ORing and Hot Swap Applications 3 Description This 30 V, 0.
56 mΩ, SON 5 × 6 mm NexFET™ power MOSFET is designed to minimize resistance for ORing and hot swap applications and is not intended for switching applications.
Top Icon S1 8D S2 7D S3 G4 D .
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6D 5D P0093-01 Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (4.
5 V) Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On-Resistance VGS(th) Threshold Voltage TYPICAL VALUE 30 93 34 VGS = 4.
5 V VGS = 10 V 1.
5 0.
74 0.
56 UNIT V nC nC mΩ mΩ V Device CSD17570Q5B CSD17570Q5BT Ordering Information(1) Qty Media Package 2500 13-Inch Reel SON 5 × 6 mm 250 7-Inch Reel Plastic Package Ship Tape and Reel (1) For all available packages, see the orderable addendum at the end of the data sheet.
Absolute Maximum Ratings TA = 25°C VDS Drain-to-Source Voltage VGS Gate-to-Source Voltage Continuous Drain Current (Package limited) VALUE 30 ±20 100 UNIT V V ID Continuous Drain Current (Silicon limited), TC = 25°C Continuous Drain Current, TA = 25°C(1) IDM Pulsed Drain Current, TA = 25°C(2) PD Power Dissipation(1) 407 53 400 3.
2 TJ, Operating Junction and Tstg Storage Temperature Range –55 to 150 EAS Avalanche Energy, single pulse ID = 90 A, L = 0.
1 mH, RG = 25 Ω 450 A A W °C mJ (1) Typical RθJA = 40°C/W on a 1 inch2 , 2 oz.
Cu pad on a 0.
06 inch thick FR4 PCB.
(2) Pulse duration ≤100 μs, duty cycle ≤2% .
.
RDS(on) - On-State Resistance (mΩ) VGS - Gate-to-Source Voltage (V) RDS(on) vs VGS 2 1.
8 TC = 25°C,I D = 50A TC = 125°C,I D = 50A 1.
6 1.
4 1.
2 1 0.
8 0.
6 0.
4 0.
2 0 0 2 4 6 8 10 ...


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