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CSD19501KCS

Texas Instruments
Part Number CSD19501KCS
Manufacturer Texas Instruments
Description 80V N-Channel NexFET Power MOSFET
Published Dec 26, 2019
Detailed Description Product Folder Sample & Buy Technical Documents Tools & Software Support & Community CSD19501KCS SLPS478A – JANUARY...
Datasheet PDF File CSD19501KCS PDF File

CSD19501KCS
CSD19501KCS

Overview
Product Folder Sample & Buy Technical Documents Tools & Software Support & Community CSD19501KCS SLPS478A – JANUARY 2014 – REVISED AUGUST 2014 CSD19501KCS 80-V N-Channel NexFET™ Power MOSFET 1 Features •1 Ultra-Low Qg and Qgd • Low Thermal Resistance • Avalanche Rated • Pb Free Terminal Plating • RoHS Compliant • Halogen Free • TO-220 Plastic Package 2 Applications • Secondary Side Synchronous Rectifier • Motor Control 3 Description This 80 V, 5.
5 mΩ, TO-220 NexFET™ power MOSFET is designed to minimize losses in power conversion applications.
Drain (Pin 2) Gate (Pin 1) Source (Pin 3) Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (10 V) Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On-Resistance VGS(th) Threshold Voltage TYPICAL VALUE 80 38 5.
8 VGS = 6 V VGS = 10 V 2.
6 6.
2 5.
5 UNIT V nC nC mΩ mΩ V Device CSD19501KCS Ordering Information(1) Package Media Qty TO-220 Plastic Package Tube 50 Ship Tube (1) For all available packages, see the orderable addendum at the end of the data sheet.
Absolute Maximum Ratings TA = 25°C VDS Drain-to-Source Voltage VGS Gate-to-Source Voltage Continuous Drain Current (Package limited) VALUE 80 ±20 100 UNIT V V Continuous Drain Current (Silicon limited), ID TC = 25°C 129 Continuous Drain Current (Silicon limited), TC = 100°C IDM Pulsed Drain Current (1) 91 305 PD Power Dissipation 217 TJ, Operating Junction and Tstg Storage Temperature Range –55 to 175 EAS Avalanche Energy, single pulse ID = 65 A, L = 0.
1 mH, RG = 25 Ω 211 A A W °C mJ (1) Max RθJC = 0.
7, pulse duration ≤100 μs, Duty cycle ≤1% RDS(on) - On-State Resistance (mΩ) VGS - Gate-to-Source Voltage (V) RDS(on) vs VGS 18 TC = 25°C,I D = 60A 16 TC = 125°C,I D = 60A 14 12 10 8 6 4 2 0 0 2 4 6 8 10 12 14 16 18 20 VGS - Gate-to- Source Voltage (V) G001 Gate Charge 10 9 ID = 60A VDS = 40V 8 7 6 5 4 3 2 1 0 048 12 16 20 24 28 32 36 40 Qg - Gate Charge (nC) G001 1 An IMPORTANT NOTIC...


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