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CSD19503KCS

Texas Instruments
Part Number CSD19503KCS
Manufacturer Texas Instruments
Description 80V N-Channel NexFET Power MOSFET
Published Dec 26, 2019
Detailed Description Product Folder Sample & Buy Technical Documents Tools & Software Support & Community CSD19503KCS SLPS479A – DECEMBE...
Datasheet PDF File CSD19503KCS PDF File

CSD19503KCS
CSD19503KCS

Overview
Product Folder Sample & Buy Technical Documents Tools & Software Support & Community CSD19503KCS SLPS479A – DECEMBER 2013 – REVISED AUGUST 2014 CSD19503KCS 80-V N-Channel NexFET™ Power MOSFET 1 Features •1 Ultra-Low Qg and Qgd • Low Thermal Resistance • Avalanche Rated • Pb Free Terminal Plating • RoHS Compliant • Halogen Free • TO-220 Plastic Package 2 Applications • Secondary Side Synchronous Rectifier • Motor Control 3 Description This 80 V, 7.
6 mΩ, TO-220 NexFET™ power MOSFET is designed to minimize losses in power conversion applications.
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Drain (Pin 2) Gate (Pin 1) Source (Pin 3) .
Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (10 V) Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On-Resistance VGS(th) Threshold Voltage TYPICAL VALUE 80 28 5.
4 VGS = 6 V VGS = 10 V 2.
8 8.
8 7.
6 UNIT V nC nC mΩ mΩ V Device CSD19503KCS Ordering Information(1) Package Media Qty TO-220 Plastic Package Tube 50 Ship Tube (1) For all available packages, see the orderable addendum at the end of the data sheet.
Absolute Maximum Ratings TA = 25°C VDS Drain-to-Source Voltage VGS Gate-to-Source Voltage Continuous Drain Current (Package limited) VALUE 80 ±20 100 UNIT V V Continuous Drain Current (Silicon limited), ID TC = 25°C 94 Continuous Drain Current (Silicon limited), TC = 100°C IDM Pulsed Drain Current (1) 66 247 PD Power Dissipation 188 TJ, Operating Junction and Tstg Storage Temperature Range –55 to 175 EAS Avalanche Energy, single pulse ID = 53 A, L = 0.
1 mH, RG = 25 Ω 140 A A W °C mJ (1) Max RθJC = 0.
8°C/W, pulse duration ≤100 μs, Duty cycle ≤1% .
RDS(on) - On-State Resistance (mΩ) VGS - Gate-to-Source Voltage (V) RDS(on) vs VGS 22 TC = 25°C,I D = 60A 20 TC = 125°C,I D = 60A 18 16 14 12 10 8 6 4 0 2 4 6 8 10 12 14 16 18 20 VGS - Gate-to- Source Voltage (V) G001 Gate Charge 10 9 ID = 60A VDS = 40V 8 7 6 5 4 3 2 1 0 0 4 8 12 16 20 24 28 Qg - Gate Charge (nC) G001 1 An IMPORTANT...


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