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FQPF2N60C Datasheet PDF


Part Number FQPF2N60C
Manufacturer HAOHAI
Title N-Channel MOSFET
Description 2A, 600V, N 2N60 Series N-Channel MOSFET FQP2N60C FQPF2N60C H H2N60P H2N60F 2N60 HAOHAI P: TO-220AB F: TO-220FP 50Pcs 100...
Features   LOW ON-RESISTANCE   FAST SWITCHING   HIGH INPUT RESISTANCE   RoHS COMPLIANT   Package: TO-220AB & TO-220F ID=2A BVDSS=600V RDS(on)=4.2Ω  
■  
■、、、RoHS  
■   、LCD、LED、、UPS、   、、、、、、   、、  
■  
■TO-220AB TO-220P()   TO-220F TO-220FP()
■  Absolute Maximum Ratings(TC=25℃) PARAMETER - Drain-source ...

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FQPF2N60 : These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply. TM Features • • • • • • 1.6A, 600V, RDS(on) = 4.7Ω @VGS = 10 V Low gate charge ( typical 9.0 nC) Low Crss ( typical 5.0 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! " G! GD S ! " " " TO-220F FQPF Series ! S Absolute Maximum Ratings Symbol VDSS ID ID.

FQPF2N60 : Product Summary The FQP2N60 & FQPF2N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 100% UIS Tested 100% Rg Tested 700V@150℃ 2A 4.4Ω TO-220 Top View TO-220F D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol FQP2N60 FQPF2N60 Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ±30 Continuous Drain TC=25°C Current .

FQPF2N60C : This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. Features • 2 A, 600 V, RDS(on) = 4.7 Ω (Max.) @ VGS = 10 V, ID = 1 A • Low Gate Charge (Typ. 8.5 nC) • Low Crss (Typ. 4.3 pF) • 100% Avalanche Tested D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol Parame.




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