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RBQ10NS100AFH

ROHM
Part Number RBQ10NS100AFH
Manufacturer ROHM
Description Schottky Barrier Diode
Published Jan 9, 2020
Detailed Description RBQ10NS100AFH Schottky Barrier Diode (AEC-Q101 qualified) Data sheet                                                 ...
Datasheet PDF File RBQ10NS100AFH PDF File

RBQ10NS100AFH
RBQ10NS100AFH


Overview
RBQ10NS100AFH Schottky Barrier Diode (AEC-Q101 qualified) Data sheet                                                   ●Outline VR 100 V Io 10 A IFSM 100 A ●Features High reliability Power mold type Cathode common dual type Low IR ●Inner Circuit                         ●Application ●Packaging Specifications Switching power supply Packing Embossed Tape Reel Size(mm) 330 Taping Width(mm) 24 ●Structure Quantity(pcs) 1000 Silicon epitaxial planar Taping Code TL Marking BQ10NS100A ●Absolute Maximum Ratings (Tc=25ºC unless otherwise specified) Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage VRM Duty≦0.
5 100 V Reverse voltage Average rectified forward current Peak forward surge current Junction temperature(1) VR Reverse direct voltage 100 V Io IFSM 60Hz half sin waveform,resistive load, Io/2 per diode,Tc=105℃Max.
60Hz half sin waveform, non-repetitive,per diode,Ta=25℃ 10 100 A A Tj - 150 ℃ Storage temperature Tstg - Note(1) To avoid occurrence of thermal runaway, actual board is to be designed to fulfill dPd/dTj<1/RθJA.
Attention -55 ~ 150 ℃ www.
rohm.
com © 2018- ROHMCo.
, Ltd.
All rights reserved.
               1/6   2019/05/27_Rev.
002 RBQ10NS100AFH                                     Data sheet ●Electrical Characteristics Parameter Forward voltage(1) Reverse current(1) Note (1) Value per diode (Tj=25ºC unless otherwise specified) Symbol Conditions VF IF=5A IR VR=100V Min.
Typ.
Max.
Unit - - 0.
77 V - - 80 μA ●Thermal Characteristics                                                                   Parameter Symbol Min.
Typ.
Max.
Unit Thermal Resistance (Junction to case)(1) (2) Per diode Per device RθJC - - 2.
1 ℃/W - 1.
3 ℃/W Thermal Resistance (Junction to ambient)(1) (3) Notes (1) Value is guaranteed by design.
  RθJA - - 55 ℃/W (2) Transient dual interface measurement (TDIM) method.
(3) Mounted on 50 x 50 x 1.
6mm FR4 board,single-sided copper,35μm thickness,reference footprint.
...



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