DatasheetsPDF.com

FDD3860

ON Semiconductor
Part Number FDD3860
Manufacturer ON Semiconductor
Description N-Channel PowerTrench MOSFET
Published Jan 12, 2020
Detailed Description FDD3860 N-Channel PowerTrench® MOSFET FDD3860 N-Channel PowerTrench® MOSFET 100 V, 29 A, 36 mΩ Features „ Max rDS(on) =...
Datasheet PDF File FDD3860 PDF File

FDD3860
FDD3860

Overview
FDD3860 N-Channel PowerTrench® MOSFET FDD3860 N-Channel PowerTrench® MOSFET 100 V, 29 A, 36 mΩ Features „ Max rDS(on) = 36 mΩ at VGS = 10 V, ID = 5.
9 A „ High Performance Trench Technology for Extremely Low rDS(on) „ 100% UIL Tested „ RoHS Compliant General Description This N-Channel MOSFET is rugged gate version of ON Semiconductor‘s advanced Power Trench® process.
This part is tailored for low rDS(on) and low Qg figure of merit, with avalanche ruggedness for a wide range of switching applications.
Applications „ DC-AC Conversion „ Synchronous Rectifier G S D DT O-P-2A5K2 (T O -25 2) D G S MOSFET Maximum Ratings TC = 25°C unless otherwise noted.
Symbol VDS VGS ID EAS PD TJ, TSTG Par...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)