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EPC2815

Part Number	EPC2815
Manufacturer	EPC
Description	Enhancement Mode Power Transistor
Published	Jan 12, 2020
Detailed Description	eGaN® FET DATASHEET EPC2815 – Enhancement Mode Power Transistor VIRHDDDi,gSS(SOh3,N3)L4,e0Aa4VdmBWump Finish: NEW PR...
Datasheet	EPC2815 PDF File

Overview

eGaN® FET DATASHEET EPC2815 – Enhancement Mode Power Transistor VIRHDDDi,gSS(SOh3,N3)L4,e0Aa4VdmBWump Finish: NEW PRODUCT 95%Pb/5%Sn EPC2815 EFFICIENT POWER CONVERSION HAL Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years.
GaN’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(ON), while its lateral device structure and majority carrier diode provide exceptionally low QG and zero QRR.
The end result is a device that can handle tasks where very high switching frequency, and low on-time are beneficial as well as those where on-state los...

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EPC2815 Enhancement Mode Power Transistor - EPC

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