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SID9973

SeCoS
Part Number SID9973
Manufacturer SeCoS
Description N-Channel MOSFET
Published Jan 14, 2020
Detailed Description Elektronische Bauelemente SID9973 14A, 60V,RDS(ON)80m N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product ...
Datasheet PDF File SID9973 PDF File

SID9973
SID9973

Overview
Elektronische Bauelemente SID9973 14A, 60V,RDS(ON)80m N-Channel Enhancement Mode Power Mos.
FET RoHS Compliant Product Description The SID9973 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-251 is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
Features * Low Gate Charge * Simple Drive Requirement TO-251 6.
6±0.
2 5.
3±0.
2 2.
3±0.
1 0.
5±0.
05 5.
6±0.
2 7.
0±0.
2 7.
0±0.
2 1.
2±0.
3 0.
75±0.
15 0.
6±0.
1 G 2.
3REF.
DS 0.
5±0.
1 Dimensions in millimeters D Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current,VGS@10V Continuous Drain Current,VGS@10V Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Marking Code: 9973 G XXXX(Date Code) S Symbol VDS VGS ID@TC=25oC ID@TC=100oC IDM PD@TC=25oC Tj, Tstg Ratings 60 ± 20 14 9 40 27 0.
22 -55~+150 Unit V V A A A W W / oC oC Thermal Data Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient http://www.
SeCoSGmbH.
com/ 01-Jun-2002 Rev.
A Max.
Max.
Symbol Rthj-c Rthj-a Ratings 4.
5 110 Unit oC /W oC /W Any changing of specification will not be informed individual Page 1 of 4 Elektronische Bauelemente SID9973 14A, 60V,RDS(ON)80m N-Channel Enhancement Mode Power Mos.
FET Electrical Characteristics( Tj=25oC Unless otherwise specified) Parameter Symbol Drain-Source Breakdown Voltage BVDSS Breakdown Voltage Temp.
Coefficient Gate Threshold Voltage BVDS/ Tj VGS(th) Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25oC) Drain-Source Leakage Current(Tj=150oC) IGSS IDSS Static Drain-Source On-Resistance RD S(O N ) Total Gate Charge2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer ...


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