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SSQ85N80SG

SeCoS
Part Number SSQ85N80SG
Manufacturer SeCoS
Description N-Channel Enhancement Mode Power MOSFET
Published Jan 14, 2020
Detailed Description Elektronische Bauelemente SSQ85 80SG 85A, 80V, RDS(O ) 8mΩ -Ch Enhancement Mode Power MOSFET RoHS Compliant Product A ...
Datasheet PDF File SSQ85N80SG PDF File

SSQ85N80SG
SSQ85N80SG


Overview
Elektronische Bauelemente SSQ85 80SG 85A, 80V, RDS(O ) 8mΩ -Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION The SSQ85N80SG is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications.
The SSQ85N80SG meet the RoHS and Green Product with Function reliability approved.
TO-220 FEATURES RDS(on)≦8mΩ @VGS=10V RDS(on)≦11.
1mΩ @VGS=4.
5V High speed power switching, Logic Level Enhanced Body diode dv/dt capability Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested TO-220 Package MARKING 85N80SG Date Code 1 Gate 2 Drain 3 Source ABSOLUTE MAXIMUM RATINGS (TJ=25°C unless otherwise specified) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current (Silicon Limited) Pulsed Drain Current TC=25°C TC=100°C VGS ID IDM Avalanche Energy, Single Pulse, @L=0.
1mH TC=25°C EAS Power Dissipation TC=25°C PD Operating Junction and Storage Temperature Range TJ, TSTG Thermal Resistance Ratings Maximum Thermal Resistance Junction-Ambient RθJA Maximum Thermal Resistance Junction-Case RθJC REF.
A B C D E F G Millimeter Min.
Max.
9.
96 10.
36 14.
7 16 2.
74 BSC.
12.
7 14.
73 1.
15 1.
82 0.
39 1.
01 3.
56 4.
82 REF.
H I J K L M Millimeter Min.
Max.
2.
54 BSC.
2.
04 2.
92 3.
745 REF.
0.
356 0.
5 5.
85 6.
85 0.
51 1.
39 Ratings 80 ±20 85 60 240 20 125 -55 ~ 175 50 1.
2 Unit V V A A mJ W °C °C / W http://www.
SeCoSGmbH.
com/ 07-Aug-2017 Rev.
A Any changes of specification will not be informed individually.
Page 1 of 4 Elektronische Bauelemente SSQ85 80SG 85A, 80V, RDS(O ) 8mΩ -Ch Enhancement Mode Power MOSFET ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise specified) Parameter Symbol Min.
Typ.
Max.
Drain-Source Breakdown Voltage Gate Threshold Voltage BVDSS VGS(th) 80 - - 1 1.
6 2.
4 Forward Transfer conductance Gate-Source Leakage Current Drain-Sour...


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