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FCH190N65F-F085

ON Semiconductor
Part Number FCH190N65F-F085
Manufacturer ON Semiconductor
Description N-Channel MOSFET
Published Jan 17, 2020
Detailed Description MOSFET – N-Channel, SUPERFET) II, FRFET) 650 V, 20.6 A, 190 mW FCH190N65F-F085 Description SUPERFET II MOSFET is ON Semi...
Datasheet PDF File FCH190N65F-F085 PDF File

FCH190N65F-F085
FCH190N65F-F085

Overview
MOSFET – N-Channel, SUPERFET) II, FRFET) 650 V, 20.
6 A, 190 mW FCH190N65F-F085 Description SUPERFET II MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance.
This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy.
Consequently SUPERFET II is very well suited for the Soft switching and Hard Switching topologies like High Voltage Full Bridge and Half Bridge DC−DC, Interleaved Boost PFC, Boost PFC for HEV−EV automotive.
SUPERFET II, FRFET MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.
Features • Typ.
RDS(on) = 148 mW at VGS = 10 V, ID = 10 A • Typ.
Qg(tot) = 63 nC at VGS = 10 V, ID = 10 A • UIS Capability • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant Applications • Automotive On Board Charger • Automotive DC/DC Converter for HEV www.
onsemi.
com VDS 650 V RDS(ON) MAX 190 mW @ 10 V ID MAX 20.
6 A D G S N-CHANNEL MOSFET SD G TO−247−3LD CASE 340CK MARKING DIAGRAM $Y&Z&3&K FCH 190N65F © Semiconductor Components Industries, LLC, 2014 November, 2019 − Rev.
3 $Y &Z &3 &K FCH190N65F−F085 = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet.
1 Publication Order Number: FCH190N65F−F085/D FCH190N65F−F085 ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Symbol Parameter Value Unit VDSS VGSS ID Drain to Source Voltage Gate to Source Voltage Drain Current − Continuous (VGS = 10) (Note 1) Pulsed Drain Current 650 ±20 20.
6 See Fig.
4 V V A A EAS dv/dt Single Pulsed Avalanche Rating (Note 2) MOSFET dv/dt 400 mJ 100 V/ns Peak Diode Recovery dv/dt (Note 3) 50 PD Power Dissip...


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