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HV-T73A

GETE
Part Number HV-T73A
Manufacturer GETE
Description Fast Recovery High Voltage Silicon Rectifier Diode
Published Jan 18, 2020
Detailed Description HV-T73A 5.0mA 12kV 80nS Fast Recovery High Voltage Silicon Rectifier Diode --------------------------------------------...
Datasheet PDF File HV-T73A PDF File

HV-T73A
HV-T73A

Overview
HV-T73A 5.
0mA 12kV 80nS Fast Recovery High Voltage Silicon Rectifier Diode ----------------------------------------------------------------------------------------------------------------------------- ------- Introduce: Reference Shape: HVGT high voltage silicon rectifier diodes is made of high quality silicon wafer chip and high reliability epoxy resin sealing structure, and through professional testing equipment inspection qualified after to customers.
Features: Fast recovery.
High reliability design.
Low current, high voltage.
Conform to RoHS and SGS.
Epoxy resin molded in vacuumHave anticorrosion in the surface.
Applications: HVGT Name: Unit: (mm) Air purification, negative ions.
DO-210S Electrostatic voltage doubling circuit.
Lead Diameter 0.
5±0.
03 Copier and X-ray.
Other high voltage rectifier circuits.
Mechanical Data: Case: epoxy resin molding.
Terminal: welding axis.
Net weight: 0.
25 grams (approx).
26.
0 (min) 10.
0 (max) Maximum Ratings And Characteristics: (Absolute Maximum Ratings) 26.
0 (min) 2.
5 (max) Items Symbols Condition Data Value Units Repetitive Peak Renerse Voltage VRRM TA=25°C Non-Repetitive Peak Renerse Voltage VRSM TA=25°C Average Forward Current Maximum IFAVM TA=25°C TOIL=55°C Non-Repetitive Forward Surge Current IFSM TA=25°C; 60Hz Half-Sine Wave; 8.
3mS Junction Temperature TJ Allowable Operation Case Temperature Tc Storage Temperature TSTG Electrical Characteristics: TA=25°C (Unless Otherwise Specified) Items Symbols Condition 12 -5.
0 -0.
5 125 -40~+125 -40~+125 kV kV mA mA A °C °C °C Data value Units Maximum Forward Voltage Drop Maximum Reverse Current Maximum Reverse Recovery Time Junction Capacitance VFM at 25°C; at IFAVM 45 V IR1 at 25°C; at VRRM 2.
0 uA IR2 at 100°C; at VRRM 5.
0 uA TRR at 25°C; IF=0.
5IR; IR=IFAVM; IRR=0.
25IR 80 nS CJ at 25°C; VR=0V; f=1MHz 1.
0 pF GETE ELECTRONIC CO.
,LTD Http://www.
getedz.
com Http://www.
hvgtsemi.
com E-mai: sales@getedz.
com GETAI ELECTRONIC DEVICE C...


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