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ESJA23-05A

HVGT
Part Number ESJA23-05A
Manufacturer HVGT
Description Fast Recovery High Voltage Silicon Rectifier Diode
Published Jan 18, 2020
Detailed Description ESJA23-05A 5.0mA 5.0kV 80nS Fast Recovery High Voltage Silicon Rectifier Diode ---------------------------------------...
Datasheet PDF File ESJA23-05A PDF File

ESJA23-05A
ESJA23-05A

Overview
ESJA23-05A 5.
0mA 5.
0kV 80nS Fast Recovery High Voltage Silicon Rectifier Diode ----------------------------------------------------------------------------------------------------------------------------- ------- INTRODUCE: SHAPE DISPLAY: HVGT high voltage silicon rectifier diodes is made of high quality silicon wafer chip and high reliability epoxy resin sealing structure, and through professional testing equipment inspection qualified after to customers.
FEATURES: 1.
Fast recovery.
2.
High reliability design.
3.
Low current, high voltage.
4.
Conform to RoHS and SGS.
SIZE: (Unit:mm) HVGT NAME: DO-203 5.
Epoxy resin molded in vacuumHave anticorrosion in the surface.
APPLICATIONS: 1.
Air purification, negative ions.
2.
Electrostatic voltage doubling circuit.
3.
Copier and X-ray.
4.
Other high voltage rectifier circuits.
MECHANICAL DATA: 1.
Case: epoxy resin molding.
2.
Terminal: welding axis.
3.
Net weight: 0.
12 grams (approx).
MAXIMUM RATINGS AND CHARACTERISTICS: (Absolute Maximum Ratings) Items Symbols Condition Data Value Units Repetitive Peak Renerse Voltage VRRM TA=25°C Non-Repetitive Peak Renerse Voltage VRSM TA=25°C Average Forward Current Maximum IFAVM TA=25°C TOIL=55°C Non-Repetitive Forward Surge Current IFSM TA=25°C; 60Hz Half-Sine Wave; 8.
3mS Junction Temperature TJ Allowable Operation Case Temperature Tc Storage Temperature TSTG ELECTRICAL CHARACTERISTICS: TA=25°C (Unless Otherwise Specified) Items Symbols Condition 5.
0 -5.
0 -0.
5 125 -40~+125 -40~+125 kV kV mA mA A °C °C °C Data value Units Maximum Forward Voltage Drop VFM at 25°C; at IFAVM 10 V Maximum Reverse Current IR1 at 25°C; at VRRM IR2 at 100°C; at VRRM 2.
0 uA 5.
0 uA Maximum Reverse Recovery Time TRR at 25°C; IF=0.
5IR; IR=IFAVM; IRR=0.
25IR 80 nS Junction Capacitance CJ at 25°C; VR=0V; f=1MHz 3.
0 pF GETE ELECTRONIC CO.
,LTD Http://www.
getedz.
com Http://www.
hvgtsemi.
com E-mai: sales@getedz.
com GETAI ELECTRONIC DEVICE CO.
,LTD TEL:00...


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