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AF03-08D

HVGT
Part Number AF03-08D
Manufacturer HVGT
Description High Voltage Silicon Rectifier Diode
Published Jan 18, 2020
Detailed Description AF03-08D 30mA 8.0kV 100nS High Voltage Silicon Rectifier Diode -------------------------------------------------------...
Datasheet PDF File AF03-08D PDF File

AF03-08D
AF03-08D

Overview
AF03-08D 30mA 8.
0kV 100nS High Voltage Silicon Rectifier Diode ----------------------------------------------------------------------------------------------------------------------------- ------- INTRODUCE: SHAPE DISPLAY: HVGT high voltage silicon rectifier diodes is made of high quality silicon wafer chip and high reliability epoxy resin sealing structure, and through professional testing equipment inspection qualified after to customers.
FEATURES: 1.
Fast switching.
2.
High reliability.
3.
High current capability.
4.
Conform to RoHS and SGS.
SIZE: (Unit:mm) HVGT NAME: DO-308 5.
Epoxy resin molded in vacuumHave anticorrosion in the surface.
APPLICATIONS: 1.
Rectifier for high voltage power supply.
2.
General purpose high voltage rectifier.
.
3.
Rectification for X-ray generator high voltage power supply.
MECHANICAL DATA: 1.
Case: epoxy resin molding.
2.
Terminal: welding axis.
3.
Net weight: 0.
27 grams (approx).
MAXIMUM RATINGS AND CHARACTERISTICS: (Absolute Maximum Ratings) Items Symbols Condition Data Value Units Repetitive Peak Renerse Voltage Non-Repetitive Peak Renerse Voltage VRRM VRSM TA=25°C TA=25°C 8.
0 kV -- kV Average Forward Current Maximum IFAVM TA=55°C TOIL=55°C 30 mA -- mA Non-Repetitive Forward Surge Current IFSM TA=25°C; 60Hz Half-Sine Wave; 8.
3mS 0.
5 A Junction Temperature TJ 125 °C Allowable Operation Case Temperature Tc -40~+125 °C Storage Temperature ELECTRICAL CHARACTERISTICS: Items TSTG TA=25°C (Unless Otherwise Specified) Symbols Condition -40~+125 °C Data value Units Maximum Forward Voltage Drop VFM at 25°C; at IFAVM 20 V Maximum Reverse Current IR1 at 25°C; at VRRM IR2 at 100°C; at VRRM 1.
0 uA 10 uA Maximum Reverse Recovery Time TRR at 25°C; IF=0.
5IR; IR=IFAVM; IRR=0.
25IR 100 nS Junction Capacitance CJ at 25°C; VR=0V; f=1MHz 0.
8 pF GETE ELECTRONIC CO.
,LTD Http://www.
getedz.
com Http://www.
hvgtsemi.
com E-mai: sales@getedz.
com GETAI ELECTRONIC DEVICE CO.
,LTD TEL:0086-20-8...


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