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ESJC60S25

HVGT
Part Number ESJC60S25
Manufacturer HVGT
Description High Voltage Silicon Rectifier Diode
Published Jan 18, 2020
Detailed Description ESJC60S25 300mA 25kV --nS High Voltage Silicon Rectifier Diode ------------------------------------------------------...
Datasheet PDF File ESJC60S25 PDF File

ESJC60S25
ESJC60S25

Overview
ESJC60S25 300mA 25kV --nS High Voltage Silicon Rectifier Diode ----------------------------------------------------------------------------------------------------------------------------- ------- INTRODUCE: SHAPE DISPLAY: HVGT high voltage silicon rectifier diodes is made of high quality silicon wafer chip and high reliability epoxy resin sealing structure, and through professional testing equipment inspection qualified after to customers.
FEATURES: 1.
High overload surge capability.
2.
Avalanche Characteristic.
3.
Medium Current, Low Forward Voltage 4.
Conform to RoHS and SGS.
SIZE: (Unit:mm) HVGT NAME: DO-721 5.
Epoxy resin molded in vacuumHave anticorrosion in the surface.
APPLICATIONS: 1.
Rectifier for high voltage power supply.
2.
General purpose high voltage rectifier.
3.
Beauty equipment.
4.
Other.
MECHANICAL DATA: 1.
Case: epoxy resin molding.
2.
Terminal: welding axis.
3.
Net weight: 2.
10 grams (approx).
MAXIMUM RATINGS AND CHARACTERISTICS: (Absolute Maximum Ratings) Items Symbols Condition Data Value Units Repetitive Peak Renerse Voltage Non-Repetitive Peak Renerse Voltage VRRM VRSM TA=25°C TA=25°C 25 kV -- kV Average Forward Current Maximum IFAVM TA=40°C TOIL=55°C 300 mA -- mA Non-Repetitive Forward Surge Current IFSM TA=25°C; 60Hz Half-Sine Wave; 8.
3mS 30 A Junction Temperature TJ 150 °C Allowable Operation Case Temperature Tc -40~+150 °C Storage Temperature ELECTRICAL CHARACTERISTICS: Items TSTG TA=25°C (Unless Otherwise Specified) Symbols Condition -40~+150 °C Data value Units Maximum Forward Voltage Drop VFM at 25°C; at IFAVM 21 V Maximum Reverse Current IR1 at 25°C; at VRRM IR2 at 100°C; at VRRM 2.
0 uA 50 uA Maximum Reverse Recovery Time TRR at 25°C; IF=0.
5IR; IR=IFAVM; IRR=0.
25IR -- nS Junction Capacitance CJ at 25°C; VR=0V; f=1MHz -- pF GETE ELECTRONIC CO.
,LTD Http://www.
getedz.
com Http://www.
hvgtsemi.
com E-mai: sales@getedz.
com GETAI ELECTRONIC DEVICE CO.
,LTD TEL:0086-20-818...


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