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ISL70020SEH

Intersil
Part Number ISL70020SEH
Manufacturer Intersil
Description 65A Enhancement Mode GaN Power Transistors
Published Jan 19, 2020
Detailed Description Datasheet ISL70020SEH, ISL73020SEH 40V, 65A Enhancement Mode GaN Power Transistors The ISL70020SEH and ISL73020SEH are...
Datasheet PDF File ISL70020SEH PDF File

ISL70020SEH
ISL70020SEH

Overview
Datasheet ISL70020SEH, ISL73020SEH 40V, 65A Enhancement Mode GaN Power Transistors The ISL70020SEH and ISL73020SEH are 40V N-channel enhancement mode GaN power transistors.
These GaN FETs have been characterized for destructive Single Event Effects (SEE) and tested for Total Ionizing Dose (TID) radiation.
Applications for these devices include commercial aerospace, medical, and nuclear power generation.
The exceptionally high electron mobility and low temperature coefficient of the GaN allows for very low rDS(ON), while its lateral device structure and majority carrier diode provide exceptionally low QG and zero QRR.
The end result is a device that can operate at a higher switching frequency with more efficiency while reducing the overall solution size.
By combining the exceptional performance of the GaN FET in a hermetically sealed Surface Mount Device (SMD) package with manufacturing in a MIL-PRF-38535 like flow results in best-in-class power transistors that are ideally suited for...


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