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R1Q6A7218ABG

Part Number	R1Q6A7218ABG
Manufacturer	Renesas
Description	72-Mbit DDRII SRAM Separate I/O 2-word Burst RAM
Published	Jan 19, 2020
Detailed Description	R1Q6A7236ABG / R1Q6A7218ABG Series R1Q6A7236ABG R1Q6A7218ABG 72-Mbit DDRII SRAM Separate I/O 2-word Burst R10DS0179EJ...
Datasheet	R1Q6A7218ABG PDF File

Overview

R1Q6A7236ABG / R1Q6A7218ABG Series R1Q6A7236ABG R1Q6A7218ABG 72-Mbit DDRII SRAM Separate I/O 2-word Burst R10DS0179EJ0011 Rev.
0.
11 2013.
01.
15 Description The R1Q6A7236 is a 2,097,152-word by 36-bit and the R1Q6A7218 is a 4,194,304-word by 18-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell.
It integrates unique synchronous peripheral circuitry and a burst counter.
All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K.
These products are suitable for applications which require synchronous operation, high speed, low voltage, high density and wide bit configuration.
These products are packaged in 165-pin plastic FBGA package.
Features ႑ Power Supply • 1.
8 V for core (VDD), 1.
4 V to VDD for I/O (VDDQ) ႑ Clock • Fast clock cycle time for high bandwidth • Two input clocks (K and /K) for precise DDR timing at clock rising edges only • Two input c...

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R1Q6A7218ABG 72-Mbit DDRII SRAM Separate I/O 2-word Burst RAM - Renesas

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