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CY14MC256J

Cypress
Part Number CY14MC256J
Manufacturer Cypress
Description 256-Kbit (32 K × 8) Serial (I2C) nvSRAM
Published Jan 19, 2020
Detailed Description CY14MC256J CY14MB256J CY14ME256J 256-Kbit (32 K × 8) Serial (I2C) nvSRAM 256-Kbit (32 K × 8) Serial (I2C) nvSRAM Featur...
Datasheet PDF File CY14MC256J PDF File

CY14MC256J
CY14MC256J

Overview
CY14MC256J CY14MB256J CY14ME256J 256-Kbit (32 K × 8) Serial (I2C) nvSRAM 256-Kbit (32 K × 8) Serial (I2C) nvSRAM Features ■ 256-Kbit nonvolatile static random access memory (nvSRAM) ❐ Internally organized as 32 K × 8 ❐ STORE to QuantumTrap nonvolatile elements initiated automatically on power-down (AutoStore) or by using I2C command (Software STORE) or HSB pin (Hardware STORE) ❐ RECALL RECALL) to or SRAM initiated on power-up (Power-Up by I2C command (Software RECALL) ❐ Automatic STORE on power-down with a small capacitor (except for CY14MX256J1) ■ High reliability ❐ Infinite read, write, and RECALL cycles ❐ 1 million STORE cycles to QuantumTrap ❐ Data retention: 20 years at 85 C ■ High speed I2C interface[1] ❐ Industry standard 100 kHz and 400 kHz speed ❐ Fast-mode Plus: 1 MHz speed ❐ High speed: 3.
4 MHz ❐ Zero cycle delay reads and writes ■ Write protection ❐ Hardware protection using Write Protect (WP) pin ❐ Software block protection for one quarter, half, or entire array ■ I2C access to special functions ❐ Nonvolatile STORE/RECALL ❐ 8 byte serial number ❐ Manufacturer ID and Product ID ❐ Sleep mode ■ Low power consumption ❐ Average active current of 1 mA at 3.
4-MHz operation ❐ Average standby mode current of 150 µA ❐ Sleep mode current of 8 µA ■ Industry standard configurations ❐ Operating voltages: • CY14MC256J: VCC = 2.
4 V to 2.
6 V • CY14MB256J: VCC = 2.
7 V to 3.
6 V • CY14ME256J: VCC = 4.
5 V to 5.
5 V ❐ Industrial temperature ❐ 8- and 16-pin small outline integrated circuit (SOIC) package ❐ Restriction of hazardous substances (RoHS) compliant Overview The Cypress CY14MC256J/CY14MB256J/CY14ME256J combines a 256-Kbit nvSRAM[2] with a nonvolatile element in each memory cell.
The memory is organized as 32 K words of 8 bits each.
The embedded nonvolatile elements incorporate the QuantumTrap technology, creating the world’s most reliable nonvolatile memory.
The SRAM provides infinite read and write cycles, while the QuantumTrap cells provide highly rel...


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