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2SK1669

Renesas
Part Number 2SK1669
Manufacturer Renesas
Description Silicon N-Channel MOSFET
Published Jan 19, 2020
Detailed Description 2SK1669 Silicon N Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switc...
Datasheet PDF File 2SK1669 PDF File

2SK1669
2SK1669

Overview
2SK1669 Silicon N Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • Built-in fast recovery diode (trr = 90 ns) • Suitable for motor control, switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) G 1 2 3 REJ03G0966-0200 (Previous: ADE-208-1310) Rev.
2.
00 Sep 07, 2005 D 1.
Gate 2.
Drain (Flange) 3.
Source S Rev.
2.
00 Sep 07, 2005 page 1 of 6 2SK1669 Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
Value at TC = 25°C Symbol VDSS VGSS ID ID(pulse)*1 IDR Pch*2 Tch Tstg Ratings 250 ±30 30 120 30 125 150 –55 to +150 (Ta = 25°C) Unit V V A A A W °C °C Electrical Characteristics Item Symbol Drain to source breakdown voltage V(BR)DSS Gate to source breakdown voltage V(BR)GSS Gate to source leak current IGSS Zero gate voltage drain current IDSS Gate to source cutoff voltage VGS(off) Static drain to source on state resistance RDS(on) Forward transfer admittance |yfs| Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Body to drain diode forward voltage VDF Body to drain diode reverse recovery time trr Note: 3.
Pulse test Min 250 ±30 — — 2.
0 — 12 — — — — — — — — — Typ — — — — — 0.
075 Max — — ±10 250 3.
0 0.
095 20 3100 1330 190 45 170 270 150 1.
0 90 — — — — — — — — — — Unit V V µA µA V Ω (Ta = 25°C) Test conditions ID = 10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±25 V, VDS = 0 VDS = 200 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 15 A, VGS = 10 V *3 S ID = 15 A, VDS = 10 V *3 pF VDS = 10 V, VGS = 0, pF f = 1 MHz pF ns ID = 15 A, VGS = 10 V, ns RL = 2 Ω ns ns V IF = 30 A, VGS = 0 ns IF = 30 A, VGS = 0, diF/...


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