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BTD6055J3

CYStech
Part Number BTD6055J3
Manufacturer CYStech
Description Low Vcesat NPN Epitaxial Planar Transistor
Published Jan 29, 2020
Detailed Description CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor BTD6055J3 Spec. No. : C659J3 Issued Date : 2008.06...
Datasheet PDF File BTD6055J3 PDF File

BTD6055J3
BTD6055J3

Overview
CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor BTD6055J3 Spec.
No.
: C659J3 Issued Date : 2008.
06.
25 Revised Date : Page No.
: 1/6 Features • Low VCE(SAT) • Low RCE(SAT), RCE(SAT)=50 mΩ(typically) at IC=5A • Low operating collector voltage • Excellent current gain characteristics at very low VCE • Suitable for low dropout voltage application • Pb-free package Symbol BTD6055J3 Outline TO-252 B：Base C：Collector E：Emitter BCE Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation @ TA=25℃ Power Dissipation @ TC=25℃ Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PD PD RθJA RθJC Tj Tstg Note : 1.
Single Pulse , Pw≦380μs,Duty≦2%.
2.
When mounted on a PCB with the minimum pad size.
BTD6055J3 Limits 15 10 7 6 9 (Note 1) 1 (Note 2) 15 71.
...


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