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9N65-TC

UTC
Part Number 9N65-TC
Manufacturer UTC
Description N-CHANNEL POWER MOSFET
Published Jan 30, 2020
Detailed Description UNISONIC TECHNOLOGIES CO., LTD 9N65-TC 9A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 9N65-TC is a high voltage p...
Datasheet PDF File 9N65-TC PDF File

9N65-TC
9N65-TC

Overview
UNISONIC TECHNOLOGIES CO.
, LTD 9N65-TC 9A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 9N65-TC is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics.
This power MOSFET is usually used in high speed switching applications of switching power supplies and adaptors.
 FEATURES * RDS(ON) < 1.
1Ω @ VGS=10 V, ID=4.
5A * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness  SYMBOL Power MOSFET  ORDERING INFORMATION Note: Ordering Number Lead Free Halogen Free Package 9N65L-TA3-T 9N65G-TA3-T TO-220 9N65L-TF1-T 9N65G-TF1-T TO-220F1 9N65L-TF3-T 9N65G-TF3-T TO-220F Pin Assignment: G: Gate C: Collector E: Emitter Pin Assignment 123 GDS GDS GDS Packing Tube Tube Tube  MARKING www.
unisonic.
com.
tw Copyright © 2018 Unisonic Technologies Co.
, Ltd 1 of 8 QW-R205-510.
A 9N65-TC Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 650 V Gate-Source Voltage Continuous Drain Current VGSS ±30 V ID 9 A Pulsed Drain Current (Note 2) Avalanche Energy Single Pulsed (Note 3) IDM EAS 18 A 250 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.
22 V/ns Power Dissipation TO-220 TO-220F/TO-220F1 PD 150 W 35 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1.
Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2.
Repetitive Rating: Pulse width limited by maximum junction temperature.
3.
L = 10mH, IAS = 7.
07A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 4.
ISD ≤ 9.
0A, di/dt ≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C  THERMAL DATA PARAMETER Junction to Ambient Junction to Case TO-220 TO-220F/TO-220F1 SYMBOL θJA θJC RATING...


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