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BSC014N06NST

Infineon

MOSFET

BSC014N06NST MOSFET OptiMOSTMPower-Transistor,60V Features •OptimizedforhighperformanceSMPS,e.g.sync.rec. •...


BSC014N06NST

Infineon


Octopart Stock #: O-1417012

Findchips Stock #: 1417012-F

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Description
BSC014N06NST MOSFET OptiMOSTMPower-Transistor,60V Features •OptimizedforhighperformanceSMPS,e.g.sync.rec. •175°Crated •100%avalanchetested •Superiorthermalresistance •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 •Higherso
More View lderjointreliabilityduetoenlargedsourceinterconnection Table1KeyPerformanceParameters Parameter Value Unit VDS 60 V RDS(on),max 1.45 mΩ ID 100 A QOSS 100 nC QG(0V..10V) 89 nC TDSON-8FL(enlargedsourceinterconnection) 8 7 65 1 2 34 4 3 2 1 5 67 8 S1 8D S2 7D S3 6D G4 5D Type/OrderingCode BSC014N06NST Package TDSON-8 FL Marking 014N06NT RelatedLinks - 1) J-STD20 and JESD22 Final Data Sheet 1 Rev.2.0,2017-03-01 OptiMOSTMPower-Transistor,60V BSC014N06NST TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Final Data Sheet 2 Rev.2.0,2017-03-01 OptiMOSTMPower-Transistor,60V BSC014N06NST 1Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current Pulsed drain current2) Avalanche energy, single pulse3) Gate source voltage Power dissipation Operating and storage temperature ID ID,pulse EAS VGS Ptot Tj,Tstg Min. - - - -20 - -55 Values Typ. Max. - 100 - 100 - 31 - 400 - 580 - 20 - 188 - 3.0 - 175 Unit Note/TestCondi






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