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BTP1207A3

CYStech
Part Number BTP1207A3
Manufacturer CYStech
Description General Purpose PNP Epitaxial Planar Transistor
Published Feb 10, 2020
Detailed Description CYStech Electronics Corp. General Purpose PNP Epitaxial Planar Transistor BTP1207A3 Spec. No. : C307A3 Issued Date : 20...
Datasheet PDF File BTP1207A3 PDF File

BTP1207A3
BTP1207A3

Overview
CYStech Electronics Corp.
General Purpose PNP Epitaxial Planar Transistor BTP1207A3 Spec.
No.
: C307A3 Issued Date : 2015.
04.
30 Revised Date : Page No.
: 1/6 Description • The BTP1207A3 is designed for general purpose amplification.
• Large IC , IC( Max) = -0.
6A • High BVCEO, BVCEO= -150V • Pb-free lead plating and halogen-free package Symbol BTP1207A3 Outline TO-92 B：Base C：Collector E：Emitter ECB Ordering Information Device BTP1207A3-0-TB-G BTP1207A3-0-BK-G Package TO-92 (Pb-free lead plating and halogen-free package) TO-92 (Pb-free lead plating and halogen-free package) Shipping 2000 pcs / Tape & Box 1000 pcs/ bag, 10 bags/box, 10boxes/carton Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, TB :2000 pcs/tape & box; BK: 1000 pcs / bag, 10 bags/box, 10 boxes/carton Product rank, zero for no rank products Product name BTP1207A3 CYStek Product Specification CYStech Electronics Corp.
Spec.
No.
: C307A3 Issued Date : 2015.
04.
30 Revised Date : Page No.
: 2/6 Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Operating Junction Temperature Range Storage Temperature Range Symbol VCBO VCEO VEBO IC PD Tj Tstg Limits -160 -150 -6 -0.
6 625 -55~+150 -55~+150 Unit V V V A mW °C °C Thermal Characteristics Parameter Thermal Resistance, Junction-to-ambient, max Symbol RθJA Value 200 Unit °C/W Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) 1 *VCE(sat) 2 *VBE(sat) 1 *VBE(sat) 2 hFE 1 hFE 2 hFE 3 fT Cob Min.
-160 -150 -6 100 120 80 100 - Typ.
-0.
11 -0.
25 - Max.
-50 -50 -0.
2 -0.
4 -0.
9 -1 270 6 Unit V V V nA nA V V V V MHz pF Test Conditions IC=-100μA IC=-1mA IE=-50μA VCB=-150V VEB=-6V IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA VCE=-5V, IC=-1mA VCE=-5V, IC=-10mA VCE=-5V, IC=-50mA VCE=-10V, IC=-10mA, f=100MHz VCB=-10V, f=1MHz *Pulse ...


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