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MBRF10L60CTG

ON Semiconductor
Part Number MBRF10L60CTG
Manufacturer ON Semiconductor
Description Switch-mode Power Rectifier
Published Feb 13, 2020
Detailed Description Switch‐mode Power Rectifier 60 V, 10 A MBR10L60CTG, MBRF10L60CTG Features and Benefits • Low Forward Voltage • Low Power...
Datasheet PDF File MBRF10L60CTG PDF File

MBRF10L60CTG
MBRF10L60CTG


Overview
Switch‐mode Power Rectifier 60 V, 10 A MBR10L60CTG, MBRF10L60CTG Features and Benefits • Low Forward Voltage • Low Power Loss/High Efficiency • High Surge Capability • 10 A Total (5 A Per Diode Leg) • Guard−Ring for Stress Protection • These Devices are Pb−Free and are RoHS Compliant Applications • Power Supply − Output Rectification • Power Management • Instrumentation Mechanical Characteristics: • Case: Epoxy, Molded • Epoxy Meets UL 94 V−0 @ 0.
125 in • Weight (Approximately): 1.
9 Grams • Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable • Lead Temperature for Soldering Purposes: 260°C Max.
for 10 Seconds www.
onsemi.
com SCHOTTKY BARRIER RECTIFIER 10 AMPERES, 60 VOLTS 1 3 4 2, 4 MARKING DIAGRAMS 1 23 TO−220 CASE 221A STYLE 6 AYWW B10L60G AKA TO−220 FULLPAK] CASE 221D AYWW B10L60G AKA 1 23 A Y WW B10L60 G AKA = Assembly Location = Year = Work Week = Device Code = Pb−Free Device = Polarity Designator ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2016 October, 2019 − Rev.
3 1 Publication Order Number: MBR10L60CT/D MBR10L60CTG, MBRF10L60CTG MAXIMUM RATINGS (Per Diode Leg) Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (Rated VR) TC = 140°C Non-repetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) (Per Leg) (Per Device) VRRM VRWM VR IF(AV) IFSM 60 5 10 200 V A A Operating Junction Temperature (Note 1) Storage Temperature ESD Ratings: Machine Model = C Human Body Model = 3B TJ −55 to +150 °C Tstg −65 to +175 °C > 400 > 8000 V Stresses exceeding those listed in the Maximum Ratings table may damage the device.
If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be a...


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