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SF80N80

STMC
Part Number SF80N80
Manufacturer STMC
Description POWER MOSFET
Published Feb 13, 2020
Detailed Description POWER MOSFET Features  80V,80A N-Channel MOSFET  RDS(on)(typ.)=6.5mΩ@VGS=10V  High ruggedness  Fast switching  100%...
Datasheet PDF File SF80N80 PDF File

SF80N80
SF80N80

Overview
POWER MOSFET Features  80V,80A N-Channel MOSFET  RDS(on)(typ.
)=6.
5mΩ@VGS=10V  High ruggedness  Fast switching  100% avalanche tested  Exceptional dv/dt capability 60V SF80N80 Applications  Switching application  Motor drive SF80N80P SF80N80F SF80N80I SF80N80D Absolute Maximum Ratings Symbol VDSS VGS ID IDM EAS PD TJ TSTG Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current(TC=25℃) Continuous Drain Current(TC=100℃) Pulsed Drain Current(Note 1 ) Single Pulsed Avalanche Energy(Note 2) Maximum Power Dissipation ( TC=25 ℃) Maximum Power Dissipation ( TC=100℃) Operating Junction Temperature Range Storage Temperature Range Value 80 ±25 80 65 320 256 150 75 -55 to +185 -55 to +185 Notes: 1.
Repetitive Rating: Pulse width limited by maximum junction temperature 2.
Starting TJ=25℃,L=1.
0mH,RG=25Ω,ID=37A,VGS=10V WWW.
SITECH.
CC st_market@163.
com Units V V A A A mJ W W ℃ ℃ 1/6 Thermal data Symbol Rth J-C Parameter Thermal Resistance, Junction to case SF80N80 Max.
1 Units ℃/ W Electrical Characteristics (TC=25℃ unless otherwise noted) Symbol Parameter Test Conditions BVDSS IDSSS IGSS VGS(th) RDS(on) gfs Qg Qgs Qgd t d(on) tr t d(off) tf Ciss Coss Crss RGint Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate Leakage Current, Forward Gate Leakage Current, Reverse Gate Threshold Voltage Collector-Emitter Saturation Voltage Forward Transconductance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Integrated gate resistor VGS=0V, ID=250uA VDS=80V, VGS=0V VGS=25V, VDS=0V VGS= -25V, VDS=0V VGS=VDS, ID=250uA VGS=10V, ID=40A VDS=15V, ID=30A VDD=30V VGS=10V ID=40A VDD=30V VGS=10V ID=40A RG=7 VDS=30V VGS=0V f = 1MHz Min.
80 2 - Typ.
3 6.
5 28 64 13 22 14 16 31 54 3400 450 170 1.
4 Max.
1 100 -100 4 7.
5 120 - Units V uA nA nA V mΩ S nC nC nC ns ns ns ns pF pF pF Ω Source-...


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