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SF50N06

STMC
Part Number SF50N06
Manufacturer STMC
Description POWER MOSFET
Published Feb 13, 2020
Detailed Description POWER MOSFET Features  60V,50A N-Channel MOSFET  RDS(on)(typ.)=6mΩ@VGS=10V  High ruggedness  Fast switching  100% a...
Datasheet PDF File SF50N06 PDF File

SF50N06
SF50N06

Overview
POWER MOSFET Features  60V,50A N-Channel MOSFET  RDS(on)(typ.
)=6mΩ@VGS=10V  High ruggedness  Fast switching  100% avalanche tested  Exceptional dv/dt capability Applications  Switching application  Motor drive SF50N06P SF50N06F SF50N06 SF50N06I SF50N706D Absolute Maximum Ratings Symbol Parameter VDSS VGS ID Drain-Source Voltage Gate-Source Voltage Continuous Drain Current(TC=25 ℃) Continuous Drain Current(TC=100℃) IDM EAS PD TJ TSTG Pulsed Drain Current(Note 1 ) Single Pulsed Avalanche Energy(Note 2) Maximum Power Dissipation ( TC=25 ℃) Maximum Power Dissipation ( TC=100℃) Operating Junction Temperature Range Storage Temperature Range Notes: 1.
Repetitive Rating: Pulse width limited by maximum junction temperature 2.
Starting TJ=25℃,L=1.
0mH,RG=50Ω,ID=37A,VGS=10V Value 60 ±25 50 40 200 100 70 34 -55 to +175 -55 to +175 Units V V A A A mJ W W ℃ ℃ WWW.
SITECH.
COM Total 6 Pages 1 st_market@163.
com Thermal data Symbol Rth J-C Parameter Thermal Resistance, Junction to case SF50N06 Max.
2.
1 Units ℃/W Electrical Characteristics (TC=25℃ unless otherwise noted) Symbol Parameter Test Conditions BVDSS IDSSS IGSS VGS(th) RDS(on) gfs Qg Qgs Qgd t d(on) tr t d(off) tf Ciss Coss Crss RGint Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate Leakage Current, Forward Gate Leakage Current, Reverse Gate Threshold Voltage Collector-Emitter Saturation Voltage Forward Transconductance Total Gate Charge Gate-Source Charge Gate-Drain Charge VGS=0V, ID=250uA VDS=60V, VGS=0V VGS=25V, VDS=0V VGS= -25V, VDS=0V VGS=VDS, ID=250uA VGS=10V, ID=25A VDS=15V, ID=30A VDD=30V VGS=10V ID=25A Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time VDD=30V VGS=10V ID=25A RG=4.
7Ω Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS=30V VGS=0V f = 1MHz Integrated gate resistor Min.
60 2 - Typ.
3 6 18 40 10 9 10 86 34 26 1650 380 165 1.
6 Max.
Units 1 100 -100 4 10 - V uA nA nA V mΩ S nC nC nC ns ns ns ns pF pF pF Ω ...


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