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SD6030AD

STMC
Part Number SD6030AD
Manufacturer STMC
Description FAST RECOVER EPITAXIAL DIODE
Published Feb 13, 2020
Detailed Description SD6030AD（TO3P） 300V FRED DISCRETE DEVICE FAST RECOVER EPITAXIAL DIODE （FRED） Features  Planar epitaxial chips  Using...
Datasheet PDF File SD6030AD PDF File

SD6030AD
SD6030AD

Overview
SD6030AD（TO3P） 300V FRED DISCRETE DEVICE FAST RECOVER EPITAXIAL DIODE （FRED） Features  Planar epitaxial chips  Using high temperature Pt diffusion process  Very short recovery time  Extremely low switching losses  Low IRM values  Soft recovery behaviour  100% tested Applications  Diode for high frequency switching devices  Anti saturation diode  Snubber diode  Free wheeling diode in converters and motor control circuits  Rectifiers in switch mode power supplies (SMPS)  Inductive heating and melting  Uninterruptible power supplies (UPS)  Ultrasonic cleaners and welders VRRM = 300 V IFAVM = 60 A VF（typ）=1.
1V（IF=30A,TVJ=25℃） trr <40 ns（IF = 1 A; di/dt = 200 A/s） Package TO3P Absolute Maximum Ratings Symbol Parameter VRRM IF(AV) IFRM Peak Repetitive Reverse Voltage Diode Continuous Forward Current ( TC=100 ℃) Repetitive Peak Surge Current (20kHz Square Wave) IFSM TJ Nonrepetitive Peak Surge Current for Per Diode (Halfwave 1 Phase 60Hz) Operating Junction Temperature Range TSTG Storage Temperature Range Value 300 60 120 300 -55 to +150 -55 to +150 Units V A A A ℃ ℃ ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified for Per Diode) Symbol VR VF IRM Parameter Test Conditions Min.
Cathode to Anode Breakdown Voltage IR = 100µA Diode Forward Voltage Diode Forward Voltage IF=30A TC=25℃ IF=30A TC=125℃ Maximum Reverse Leakage Current VR=300V TC=25℃ VR=300V TC=125℃ 300 Typ.
Max.
Units 1.
10 1.
20 0.
95 1.
15 10 100 V V µA µA No.
1 Total 2 www.
sitech.
cc st_market@163.
com SD6030AD（TO3P） 300V FRED DISCRETE DEVICE DYNAMIC RECOVERY CHARACTERISTICS(TJ = 25 °C unless otherwise specified) Symbol IRRM Qrr trr S IRRM Qrr trr S Parameter Diode Peak Reverse Recovery Current Reverse recovery charge (Area Under the Curve Defined by IRRM and trr).
Diode Reverse Recovery Time S= tb/ta Diode Peak Reverse Recovery Current Reverse recovery charge (Area Under the Curve Defined by IRRM and trr).
Diode Reverse Recovery Time S= tb/ta Test ...


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